IXFR44N50Q3 [IXYS]
Power Field-Effect Transistor, 25A I(D), 500V, 0.154ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN;
| 型号： | IXFR44N50Q3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 25A I(D), 500V, 0.154ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
HiperFETTM
Power MOSFET
Q3-Class
VDSS = 500V
ID25 = 25A
RDS(on) ≤ 154mΩ
IXFR44N50Q3
trr
≤ 250ns
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
ISOPLUS247
E153432
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
500
500
V
V
VDGR
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
G
Isolated Tab
D
S
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
25
A
A
130
G = Gate
S = Source
D
= Drain
IA
EAS
TC = 25°C
TC = 25°C
44
1.5
A
J
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
50
V/ns
W
300
Features
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
Low Intrinsic Gate Resistance
2500V~ Electrical Isolation
Fast Intrinsic Rectifier
z
z
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z
z
z
z
VISOL
50/60 Hz, 1 Minute
Mounting Force
2500
V∼
Avalanche Rated
FC
20..120/4.5..27
5
N/lb.
g
Low Package Inductance
Weight
Advantages
z
High Power Density
Easy to Mount
Space Savings
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
500
3.5
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = ±30V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
6.5
z
z
±100 nA
Power Supplies
DC Choppers
Temperature and Lighting Controls
IDSS
25 μA
1 mA
z
TJ = 125°C
z
RDS(on)
VGS = 10V, ID = 22A, Note 1
154 mΩ
DS100382A(05/12)
© 2012 IXYS CORPORATION, All Rights Reserved
IXFR44N50Q3
Symbol
Test Conditions
Characteristic Values
ISOPLUS247 (IXFR) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 22A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
17
28
S
Ciss
Coss
Crss
4800
625
56
pF
pF
pF
RGi
0.13
Ω
td(on)
tr
td(off)
tf
30
13
37
9
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 22A
RG = 2Ω (External)
1 = Gate
2,4 = Drain
3 = Source
Qg(on)
Qgs
93
34
44
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 22A
Qgd
RthJC
RthCS
0.41 °C/W
°C/W
TO-247
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
44
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
176
1.4
trr
250
ns
A
IF = 22A, -di/dt = 100A/μs
IRM
QRM
13.2
1.4
VR = 100V, VGS = 0V
μC
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFR44N50Q3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
45
40
35
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
VGS = 10V
9V
VGS = 10V
9V
8V
8V
7V
7V
6V
0
0
0
0
1
2
3
4
5
6
7
0
5
10
15
20
25
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 22A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
45
40
35
30
25
20
15
10
5
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
8V
VGS = 10V
I D = 44A
I D = 22A
7V
6V
5V
0
2
4
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 22A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
30
25
20
15
10
5
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
VGS = 10V
TJ = 125ºC
TJ = 25ºC
0
10
20
30
40
50
60
70
80
90
100
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2012 IXYS CORPORATION, All Rights Reserved
IXFR44N50Q3
Fig. 7. Input Admittance
Fig. 8. Transconductance
70
60
50
40
30
20
10
0
50
45
40
35
30
25
20
15
10
5
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
0
4
0.3
0
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
1.3
40
0
10
20
30
40
50
60
70
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
16
14
12
10
8
140
120
100
80
VDS = 250V
I D = 22A
I G = 10mA
60
6
TJ = 125ºC
40
4
TJ = 25ºC
20
2
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
10
20
30
40
50
60
70
80
90
100 110 120 130
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1000
10,000
1,000
100
RDS(on) Limit
C
iss
100
10
1
25µs
100µs
C
oss
TJ = 150ºC
C
1ms
TC = 25ºC
rss
Single Pulse
= 1 MHz
5
f
10
0.1
10
15
20
25
30
35
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFR44N50Q3
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_44N50Q3(Q7)9-09-11
相关型号：
IXFR48N60Q3
Power Field-Effect Transistor, 32A I(D), 600V, 0.154ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN
IXYS
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