IXFN-25N90 [IXYS]
HiPerFETTM Power MOSFETs Single Die MOSFET; HiPerFETTM功率MOSFET的单芯片MOSFET
| 型号： | IXFN-25N90 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFETTM Power MOSFETs Single Die MOSFET |
| 文件： | 总4页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM Power MOSFETs
Single Die MOSFET
VDSS
ID (cont) RDS(on)
trr
900 V
900 V
26 A 0.30 W 250 ns
25 A 0.33 W 250 ns
IXFN 26N90
IXFN 25N90
N-Channel Enhancement Mode
D
Avalanche Rated, High dv/dt, Low trr
G
S
Preliminary data sheet
S
Symbol
TestConditions
MaximumRatings
miniBLOC, SOT-227 B (IXFN)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
900
900
V
V
S
TJ = 25°C to 150°C; RGS = 1 MW
G
VGS
Continuous
Transient
±20
±30
V
V
VGSM
S
ID25
IDM
IAR
TC = 25°C
26N90
25N90
26N90
25N90
26N90
25N90
26
25
104
100
26
A
A
A
D
TC = 25°C, pulse width limited by TJM
TC = 25°C
G = Gate
S = Source
D = Drain
25
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
EAR
TC = 25°C
TC = 25°C
64
3
mJ
J
EAS
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
PD
TC = 25°C
600
W
Features
TJ
-55 ... +150
150
°C
°C
°C
• Internationalstandardpackage
• miniBLOC, withAluminiumnitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TJM
Tstg
-55 ... +150
TJ
1.6 mm (0.63 in) from case for 10 s
-
°C
VISOL
50/60 Hz, RMS
IISOL£ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
• Low package inductance
• Fast intrinsic Rectifier
Md
Mountingtorque
Terminalconnectiontorque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
Symbol
30
g
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
900
3.0
V
V
VGH(th)
5.0
• Temperatureandlightingcontrols
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
100 mA
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
2
mA
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS
= 10 V, ID = 0.5 • ID25
26N90
25N90
0.30
0.33
W
W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97526E(10/99)
1 - 4
IXFN 25N90
IXFN 26N90
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
miniBLOC, SOT-227 B
min.
typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
18
28
S
C
8.7 10.8
800 1000
300 375
nF
pF
pF
0 iss
Coss
Crss
td(on)
tr
td(off)
tf
60
35
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
M4 screws (4x) supplied
Dim.
Millimeter
Min. Max.
31.50 31.88 1.240 1.255
Inches
Min.
RG = 1 W (External)
130
24
Max.
A
B
7.80
8.20 0.307 0.323
C
D
4.09
4.09
4.29 0.161 0.169
4.29 0.161 0.169
Qg(on)
Qgs
240
56
nC
nC
nC
E
F
4.09
4.29 0.161 0.169
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
14.91 15.11 0.587 0.595
Qgd
107
G
H
30.12 30.30 1.186 1.193
38.00 38.23 1.496 1.505
J
K
11.68 12.22 0.460 0.481
RthJC
RthCK
0.21 K/W
K/W
8.92
9.60 0.351 0.378
L
M
0.76
0.84 0.030 0.033
0.05
12.60 12.85 0.496 0.506
25.15 25.42 0.990 1.001
N
O
1.98
2.13 0.078 0.084
P
4.95
5.97 0.195 0.235
Q
26.54 26.90 1.045 1.059
R
S
3.94
4.72
4.42 0.155 0.174
4.85 0.186 0.191
T
U
24.59 25.07 0.968 0.987
-0.05 0.1 -0.002 0.004
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
26N90
25N90
26
25
A
A
V
ISM
Repetitive;
26N90
25N90
104
100
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
IF = IS, -di/dt = 100 A/ms, VR = 100 V
250 ns
QRM
IRM
1.4
10
mC
A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFN 25N90
IXFN 26N90
Figure 1. Output Characteristics at 25OC
Figure 2. Extended Output Characteristics at 125OC
50
20
15
10
5
T
= 25°C
V
= 9V
J
GS
T
= 25°C
V
= 9V
8V
J
GS
8V
7V
6V
40
30
20
10
0
7V
6V
5V
4V
5V
4V
0
0
4
8
12
16
20
0
2
4
6
8
10
VCE - Volts
VDS - Volts
Figure 4. Admittance Curves
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID
30
25
30
25
20
15
10
5
V
= 9V
GS
T
= 125°C
J
8V
7V
6V
5V
4V
20
TJ = 125OC
15
TJ = 25OC
10
5
0
0
0
5
10
15
VDS - Volts
20
25
2
3
4
5
6
7
VGS - Volts
Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ
Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID
2.4
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
= 10V
GS
V
= 10V
GS
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
= 26A
= 13A
D
T
= 125°C
J
I
D
T
= 25°C
J
25
50
75
100
125
150
0
10
20
30
40
50
TJ - Degrees C
ID - Amperes
© 2000 IXYS All rights reserved
3 - 4
IXFN 25N90
IXFN 26N90
Figure 7. Gate Charge
Figure 8. Capacitance Curves
20000
10000
15
12
9
Ciss
V
= 500 V
= 13 A
= 10 mA
DS
D
G
I
I
f = 1MHz
Coss
Crss
1000
100
6
3
0
0
5
10 15 20 25 30 35 40
0
50 100 150 200 250 300 350
VDS - Volts
Gate Charge - nC
Capacitance Curves
Figure10. Drain Current vs. Case Temperature
50
30
IXFN26N90
IXFN25N90
45
40
35
30
25
20
15
10
5
25
20
15
10
5
o
T
= 125 C
J
o
= 25 C
T
J
0
0
0.0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75
1 00 1 25 1 50
Case Temperatue - oC
VSD - Volts
Figure 11. Transient Thermal Resistance
0. 300
0.100
0.010
0.001
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4 - 4
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