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IXFH88N30P [IXYS]

Polar HiPerFET Power MOSFET; 极地HiPerFET功率MOSFET
IXFH88N30P
型号： IXFH88N30P
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Polar HiPerFET Power MOSFET
极地HiPerFET功率MOSFET
文件： 总5页 (文件大小：145K)
中文：  中文翻译
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PolarTM HiPerFETTM  
Power MOSFET  
VDSS = 300V  
ID25 = 88A  
RDS(on) ≤ 40mΩ  
trr ≤ 200ns  
IXFT88N30P  
IXFH88N30P  
IXFK88N30P  
TO-268 (IXFT)  
N-Channel Enhancement Mode  
Avalanche Rated  
G
Fast Intrinsic Diode  
S
Tab  
Tab  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247(IXFH)  
TJ = 25°C to 150°C  
300  
300  
V
V
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
G
D
S
ID25  
IL(RMS)  
TC = 25°C  
External Lead Current Limit  
88  
75  
A
A
TO-264 (IXFK)  
IDM  
TC = 25°C, Pulse Width Limited by TJM  
220  
A
IA  
TC = 25°C  
TC = 25°C  
60  
2
A
J
EAS  
G
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
10  
V/ns  
W
D
S
Tab  
TC = 25°C  
600  
G = Gate  
S = Source  
D
= Drain  
TJ  
-55 to +150  
+150  
°C  
°C  
°C  
Tab = Drain  
TJM  
Tstg  
Features  
-55 to +150  
TL  
1.6mm (0.063in) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z International Standard Packages  
z Fast Intrinsic Diode  
TSOLD  
z Avalanche Rated  
Md  
Mounting Torque (TO-247&TO-264)  
1.13/10  
Nm/lb.in.  
z Low RDS(ON) and QG  
z Low Package Inductance  
Weight  
TO-268  
TO-247  
TO-264  
4
6
10  
g
g
g
Advantages  
z High Power Density  
z Easy to Mount  
Symbol  
Test Conditions  
Characteristic Values  
z Space Savings  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
300  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 4mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
5.0  
z DC-DC Coverters  
z Battery Chargers  
±100 nA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
IDSS  
25 μA  
TJ = 125°C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
250 μA  
z DC Choppers  
RDS(on)  
40 mΩ  
z AC and DC Motor Drives  
z
Uninterrupted Power Supplies  
High Speed Power Switching  
z
Applications  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS99216F(11/09)  
IXFT88N30P IXFH88N30P  
IXFK88N30P  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXFK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
40  
60  
S
Ciss  
Coss  
Crss  
6300  
950  
pF  
pF  
pF  
190  
td(on)  
tr  
td(off)  
tf  
25  
24  
96  
25  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 60A  
RG = 3.3Ω (External)  
Millimeter  
Inches  
Dim.  
Qg(on)  
Qgs  
180  
44  
nC  
nC  
nC  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
90  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
RthJC  
RthCS  
0.21 °C/W  
TO-247  
TO-264  
0.21  
0.15  
°C/W  
°C/W  
c
D
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
25.91 26.16  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
Source-Drain Diode  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
IS  
VGS = 0V  
88  
A
A
V
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
220  
1.5  
TO-247 (IXFH) Outline  
100  
0 .6  
200 ns  
IF = 25A, -di/dt = 100A/μs,  
VR = 100V, VGS = 0V  
QRM  
μC  
∅ P  
1
2
3
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
e
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
TO-268 (IXFT) Outline  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFT88N30P IXFH88N30P  
IXFK88N30P  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
200  
180  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
7V  
8V  
7V  
6V  
5V  
60  
6V  
5V  
40  
20  
0
0.0  
0.0  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
8.0  
200  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 44A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
9V  
8V  
VGS = 10V  
7V  
I D = 88A  
I D = 44A  
6V  
5V  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 44A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.6  
VGS = 10V  
External Lead Current Limit  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
TJ = 125ºC  
TJ = 25ºC  
20  
40  
60  
80  
100  
120  
140  
160  
180  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFT88N30P IXFH88N30P  
IXFK88N30P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
60  
25ºC  
- 40ºC  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
3.0  
0.3  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
1.4  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
240  
200  
160  
120  
80  
10  
8
VDS = 150V  
I
I
D = 44A  
G = 10mA  
6
4
TJ = 125ºC  
2
40  
TJ = 25ºC  
0
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1,000  
100  
10  
10,000  
1,000  
100  
RDS(on) Limit  
10ms  
100µs  
25µs  
C
iss  
1ms  
C
oss  
rss  
DC  
C
TJ = 150ºC  
C = 25ºC  
Single Pulse  
= 1 MHz  
f
T
1
5
10  
15  
20  
25  
30  
35  
1
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFT88N30P IXFH88N30P  
IXFK88N30P  
Fig. 13. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_88N30P(8S)11-18-09-A  

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