IXFH96N20P [IXYS]
PolarHT HiPerFET Power MOSFET; PolarHT HiPerFET功率MOSFET
| 型号： | IXFH96N20P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHT HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHTTM HiPerFET
Power MOSFET
IXFH 96N20P
IXFT 96N20P
IXFV 96N20P
VDSS
ID25
RDS(on)
= 200 V
= 96 A
≤ 24 mΩ
≤ 200 ns
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 150° C
200
200
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
20
30
V
V
G
D
S
(TAB)
ID25
TC =25° C
96
75
A
A
A
ID(RMS)
IDM
External lead current limit
TC = 25° C, pulse width limited by TJM
TO-268 (IXFT)
225
IAR
TC =25° C
60
A
EAR
EAS
TC =25° C
TC =25° C
50
mJ
J
G
1.5
S
D (TAB)
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
,
10
V/ns
PLUS220 (IXFV)
TC =25° C
600
W
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
G
D
S
D (TAB)
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
300
260
°C
°C
Md
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
G = Gate
D = Drain
S = Source
TAB = Drain
Weight
TO-220
TO-247
TO-268
4
6
5
g
g
g
Features
l
Symbol
Test Conditions
Characteristic Values
Fast Intrinsic Diode
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
l
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = 20 VDC, VDS = 0
200
V
V
l
2.5
5.0
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
Advantages
TJ = 150°C
l
Easy to mount
Space savings
High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
24 mΩ
l
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
l
DS99222E(02/06)
© 2006 IXYS All rights reserved
IXFH 96N20P IXFT 96N20P
IXFV 96N20P
Symbol
gfs
Test Conditions
Characteristic Values
TO-247 (IXFH) Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
40
52
S
Ciss
Coss
Crss
4800
1020
270
pF
pF
pF
1
2
3
td(on)
tr
td(off)
tf
28
30
75
30
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 4 Ω (External)
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
145
30
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
80
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCS
0.25° C/W
° C/W
(TO-247)
0.21
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Source-Drain Diode
Characteristic Values
.780 .800
.177
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
VGS = 0 V
Repetitive
96
A
A
V
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
ISM
240
1.5
TO-268 (IXFT) Outline
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25 A
120
0.7
7
200 ns
QRM
IRM
-di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
µC
A
PLUS220 (IXFV) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463
6,771,478 B2
IXFH 96N20P IXFT 96N20P
IXFV 96N20P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25
º
C
@ 25 C
º
250
225
200
175
150
125
100
75
100
90
80
70
60
50
40
30
20
10
0
VGS = 10V
9V
V
= 10V
9V
GS
8V
8V
7V
6V
7V
6V
50
25
0
0
0
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10 12 14 16 18 20
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 150
Fig. 4. RDS(on Norm alized to 0.5 ID25
)
º
C
Value vs. Junction Tem perature
100
90
80
70
60
50
40
30
20
10
0
3
2.8
2.6
2.4
2.2
2
VGS = 10V
9V
VGS = 10V
8V
7V
ID = 96A
1.8
1.6
1.4
1.2
1
ID = 48A
6V
5V
0.8
0.6
1
2
3
4
5
6
7
-50 -25
0
25
50
75 100 125 150 175
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
0.5 ID25 Value vs. ID
Fig. 6. Drain Current vs. Case
Tem perature
4.3
4
90
80
70
60
50
40
30
20
10
0
External Lead Current Limit
VGS = 10V
3.7
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
TJ = 175ºC
TJ = 125ºC
TJ = 25ºC
0.7
-50 -25
0
25
50
75
100 125 150 175
25 50 75 100 125 150 175 200 225 250
I D - Amperes
TC - Degrees Centigrade
© 2006 IXYS All rights reserved
IXFH 96N20P IXFT 96N20P
IXFV 96N20P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
160
140
120
100
80
80
70
60
50
40
30
20
10
0
TJ = -40ºC
25ºC
150ºC
60
TJ = 150ºC
25ºC
40
-40ºC
20
0
4.5
0.4
0
5
5.5
6
6.5
7
7.5
8
8.5
9
0
25
50
75
100 125 150 175 200
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
300
250
200
150
100
50
10
9
8
7
6
5
4
3
2
1
0
VDS = 100V
ID = 48A
IG = 10mA
TJ = 150ºC
TJ = 25ºC
0
0.6
0.8
1
1.2
1.4
1.6
0
15 30 45 60 75 90 105 120 135 150
VS D - Volts
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
100
1000
100
10
f = 1MHz
TJ = 175ºC
RDS(on) Limit
TC = 25ºC
C
iss
25µs
100µs
1ms
C
C
10ms
oss
rss
DC
1
5
10
15
20
25
30
35
40
10
100
1000
VDS - Volts
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 96N20P IXFT 96N20P
IXFV 96N20P
Fig. 13. Maxim um Transient Therm al Resistance
1.00
0.10
0.01
1
10
100
1000
Pulse Width - Milliseconds
© 2006 IXYS All rights reserved
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