IXFH96N15P [IXYS]
PolarHT HiPerFET Power MOSFET; PolarHT HiPerFET功率MOSFET
| 型号： | IXFH96N15P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHT HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：318K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHTTM HiPerFET
Power MOSFET
VDSS = 150 V
ID25 = 96 A
RDS(on) ≤ 24 mΩ
IXFH 96N15P
IXFV 96N15P
IXFV 96N15PS
trr
≤ 200 ns
N-Channel Enhancement Mode
Avalanche Energy Rated
Fast Intrinsic Diode
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
G
D
S
(TAB)
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
150
150
V
V
PLUS220 (IXFV)
VGS
VGSM
Continuous
Transient
20
30
V
V
ID25
ID(RMS)
IDM
TC =25° C
96
75
250
60
A
A
A
A
External lead current limit
TC = 25° C, pulse width limited by TJM
TC =25° C
G
D (TAB)
D
S
IAR
EAR
EAS
TC =25° C
TC =25° C
40
1.0
mJ
J
PLUS220SMD (IXFV__S)
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 4 Ω
,
10
V/ns
TC =25° C
480
W
G
S
D (TAB)
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
G = Gate
D = Drain
TAB = Drain
S = Source
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
300
260
°C
°C
Features
FC
Mounting force
Mounting torque
(PLUS220)
(TO-247)
11...65/2.4...11
N/lb
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Md
1.13/10 Nm/lb.in.
Weight
TO-247
PLUS220
6
4
g
g
l
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
Advantages
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = 20 VDC, VDS = 0
150
V
V
l
Easy to mount
Space savings
High power density
l
3.0
5.0
l
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
1000
µA
µA
TJ = 175° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
24 mΩ
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
DS99208E(12/05)
© 2006 IXYS All rights reserved
IXFH 96N15P
IXFV 96N15P IXFV 96N15PS
Symbol
gfs
Test Conditions
Characteristic Values
TO-247 (IXFH) Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
35
45
S
Ciss
Coss
Crss
3500
1000
280
pF
pF
pF
1
2
3
td(on)
tr
td(off)
tf
30
33
66
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 4 Ω (External)
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Qg(on)
Qgs
110
26
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
59
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCS
0.31° C/W
° C/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
(TO-247, PLUS220)
0.21
20.80 21.46
15.75 16.26
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Source-Drain Diode
Characteristic Values
.780 .800
.177
(TJ = 25°C, unless otherwise specified)
∅P 3.55
Q
3.65
.140 .144
Symbol
IS
Test Conditions
Min.
Typ.
Max.
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
VGS = 0 V
Repetitive
96
A
A
V
ISM
250
1.5
PLUS220 (IXFV) Outline
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25 A, -di/dt = 100 A/µs
200 ns
QRM
IRM
VR = 100 V, VGS = 0 V
600
6
nC
A
PLUS220SMD (IXFV__S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463
6,771,478 B2
IXFH 96N15P
IXFV 96N15P IXFV 96N15PS
Fig. 2. Extended Output Characteristics
Fig. 1. Output Characteristics
@ 25
º
C
@ 25 C
º
100
90
80
70
60
50
40
30
20
10
0
200
175
150
125
100
75
VGS = 10V
9V
V
= 10V
GS
9V
8V
8V
7V
50
7V
6V
25
6V
0
0
0
0
0.5
1
1.5
2
2.5
5.5
250
0
2
4
6
8
VD S - Volts
10 12 14 16 18 20
VD S - Volts
Fig. 3. Output Characteristics
@ 150
Fig. 4. RDS(on Normalized to 0.5 ID25
Value vs. Junction Temperature
)
º
C
2.8
2.6
2.4
2.2
2
100
90
80
70
60
50
40
30
20
10
0
VGS = 10V
9V
VGS = 10V
8V
1.8
1.6
1.4
1.2
1
ID = 96A
ID = 48A
7V
6V
5V
0.8
0.6
0.5
1
1.5
2
2.5
3
VD S - Volts
3.5
4
4.5
5
-50 -25
0
25
50
TJ - Degrees Centigrade
75 100 125 150 175
Fig. 5. RDS(on) Normalized to
0.5 ID25 Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
80
70
60
50
40
30
20
10
0
3.8
3.4
3
External Lead Current
Limit
T = 175ºC
J
2.6
2.2
1.8
1.4
1
V
= 10V
GS
T = 25ºC
J
V
= 15V
GS
0.6
-50 -25
0 50
TC - Degrees Centigrade
25
75 100 125 150 175
50
100 150
I D - Amperes
200
© 2006 IXYS All rights reserved
IXFH 96N15P
IXFV 96N15P IXFV 96N15PS
Fig. 8. Transconductance
Fig. 7. Input Admittance
180
160
140
120
100
80
TJ = -40ºC
25ºC
150ºC
60
50
40
30
20
10
0
60
TJ = 150ºC
25ºC
-40ºC
40
20
0
4
0.4
0
5
6
7
8
9
10
1.8
40
0
0
1
25
50
75
I D - Amperes
100 125 150 175 200
VG S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
300
250
200
150
100
50
VDS = 75V
I
I
D = 48A
G = 10mA
TJ = 150ºC
TJ = 25ºC
0
0.6
0.8
1
1.2
VS D - Volts
1.4
1.6
10 20 30 40 50 60 70 80 90 100 110
Q G - nanoCoulombs
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
100
1000
100
10
f = 1MHz
RDS(on) Limit
25µs
C
iss
100µs
1ms
10ms
C
oss
DC
TJ = 175ºC
C
TC = 25ºC
rss
1
5
10
15
20
VDS - Volts
25
30
35
10
100
1000
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 96N15P
IXFV 96N15P IXFV 96N15PS
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
1. 00
0. 10
0. 01
1
10
100
1000
Puls e W idth - millis ec onds
© 2006 IXYS All rights reserved
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