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IXFH94N30P3 [IXYS]

Power Field-Effect Transistor, 94A I(D), 300V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN;
IXFH94N30P3
型号： IXFH94N30P3
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power Field-Effect Transistor, 94A I(D), 300V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN

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Preliminary Technical Information  
Polar3TM HiperFETTM  
Power MOSFET  
VDSS = 300V  
ID25 = 94A  
RDS(on) 36m  
IXFT94N30P3  
IXFQ94N30P3  
IXFH94N30P3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXFT)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
TO-3P (IXFQ)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
300  
300  
V
V
G
VDGR  
D
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
S
D (Tab)  
ID25  
IDM  
TC = 25C  
94  
A
A
TO-247 (IXFH)  
TC = 25C, Pulse Width Limited by TJM  
235  
IA  
TC = 25C  
TC = 25C  
47  
A
J
EAS  
2.5  
G
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
35  
V/ns  
W
D
D (Tab)  
S
1040  
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Fast Intrinsic Rectifier  
Avalanche Rated  
Md  
Mounting Torque (TO-247 & TO-3P)  
1.13 / 10  
Nm/lb.in  
Low RDS(ON) and QG  
Weight  
TO-268  
TO-3P  
TO-247  
4.0  
5.5  
6.0  
g
g
g
Low Package Inductance  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
300  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
5.0  
          100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
IDSS  
25 A  
TJ = 125C  
750 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
36 m  
Robotics and Servo Controls  
DS100479A(12/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFT94N30P3 IXFQ94N30P3  
IXFH94N30P3  
Symbol  
Test Conditions  
Characteristic Values  
TO-3P Outline  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
40  
68  
S
Ciss  
Coss  
Crss  
5510  
965  
25  
pF  
pF  
pF  
RGi  
Gate Input Resistance  
1.2  
td(on)  
tr  
td(off)  
tf  
23  
19  
49  
11  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1(External)  
Qg(on)  
Qgs  
102  
33  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
37  
RthJC  
RthCS  
0.12 C/W  
C/W  
(TO-247 & TO-3P)  
0.25  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
94  
A
A
V
TO-247 Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
376  
1.5  
trr  
250  
ns  
A
P  
IF = 47A, -di/dt = 100A/s  
1
2
3
IRM  
QRM  
15.6  
1.4  
VR = 100V, VGS = 0V  
μC  
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
TO-268 Outline  
e
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Terminals: 1 - Gate  
3 - Source  
2,4 - Drain  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
PRELIMANARY TECHNICAL INFORMATION  
.780 .800  
.177  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFT94N30P3 IXFQ94N30P3  
IXFH94N30P3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
220  
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
GS  
V
= 10V  
8V  
GS  
8V  
7V  
7V  
6V  
6V  
5V  
60  
40  
5V  
20  
0
0
5
10  
15  
20  
25  
30  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 47A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
8V  
7V  
GS  
I
= 94A  
D
6V  
I
= 47A  
D
5V  
4V  
0
1
2
3
4
5
6
7
8
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 47A Value vs.  
Drain Current  
100  
80  
60  
40  
20  
0
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFT94N30P3 IXFQ94N30P3  
IXFH94N30P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
160  
140  
120  
100  
80  
140  
120  
100  
80  
T
J
= - 40ºC  
T
J
= 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
60  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
V
= 150V  
DS  
I
I
= 47A  
D
G
= 10mA  
T
J
= 125ºC  
T
J
= 25ºC  
1.0  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.1  
1.2  
1.3  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1000  
100  
10  
= 1 MHz  
f
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
C
oss  
T
= 150ºC  
J
1ms  
C
rss  
T = 25ºC  
C
Single Pulse  
10  
1
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFT94N30P3 IXFQ94N30P3  
IXFH94N30P3  
Fig. 13. Maximum Transient Thermal Impedance  
AAAAA  
0.2  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_94N30P3(W8) 6-18-12  

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