IXFH36N50P [IXYS]
PolarHV HiPerFET Power MOSFET; PolarHV HiPerFET功率MOSFET
| 型号： | IXFH36N50P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFH 36N50P
IXFT 36N50P
IXFV 36N50P
IXFV 36N50PS
VDSS = 500 V
ID25 = 36 A
RDS(on) ≤ 170 mΩ
trr ≤ 200 ms
Fast Intrinsic Diode
TO-247 AD (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
500
500
V
V
D (TAB)
VGS
VGSM
Continuous
Transient
30
40
V
V
TO-268 (IXFT)
ID25
IDM
TC =25° C
TC = 25° C, pulse width limited by TJM
36
90
A
A
G
S
IAR
EAR
EAS
TC =25° C
TC =25° C
TC =25° C
36
50
1.5
A
mJ
J
D (TAB)
PLUS220 (IXFV)
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 3 Ω
,
10
V/ns
TC =25° C
540
W
G
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
D (TAB)
D
S
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C PLUS220SMD (IXFV...S)
°C
Md
Mounting torque (TO-247)
1.13/10 Nm/lb.in.
Weight
TO-247
TO-268
PLUS220
6
5
2
g
g
g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
l
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250µA
VDS = VGS, ID = 4 mA
VGS = 30 VDC, VDS = 0
500
V
V
3.0
5.0
l
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
500
µA
µA
Advantages
TJ = 125° C
l
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
170 mΩ
Easy to mount
Space savings
High power density
l
l
DS99364E(03/06)
© 2006 IXYS All rights reserved
IXFH36N50P IXFT 36N50P
IXFV 36N50P IXFV 36N50PS
TO-247 (IXFH) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
23
36
S
1
2
3
Ciss
Coss
Crss
5500
510
40
pF
pF
pF
td(on)
tr
td(off)
tf
25
27
75
21
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
RG = 3 Ω (External)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qg(on)
Qgs
93
30
31
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Qgd
RthJC
RthCS
0.23 ° C/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
(TO-247)
(PLUS220)
0.21
0.21
° C/W
° C/W
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
Characteristic Values
∅P 3.55
3.65
.140 .144
(TJ = 25°C, unless otherwise specified)
Q
5.89
6.40 0.232 0.252
Symbol
IS
Test Conditions
Min.
Typ.
Max.
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
VGS = 0 V
Repetitive
36
A
A
V
ISM
90
TO-268 (IXFT) Outline
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25A,
200
ns
QRM
IRM
-di/dt = 100 A/µs
VR = 100V
0.8
8.0
µC
A
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXFH36N50P IXFT 36N50P
IXFV 36N50P IXFV 36N50PS
Fig. 2. Extended Output Characteristics
Fig. 1. Output Characteristics
@ 25 C
º
º
@ 25 C
36
32
28
24
20
16
12
8
80
70
60
50
40
30
20
10
0
V
= 10V
8V
V
= 10V
8V
GS
GS
7V
7V
6.5V
6V
6V
5.5V
5V
5.5V
5V
4
0
0
0
0
1
2
3
4
5
6
7
16
80
0
2
4
6
8
10 12 14 16 18 20 22 24
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125
Fig. 4. RDS(on Norm alized to ID = 18A
)
º
C
Value vs. Junction Tem perature
36
32
28
24
20
16
12
8
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
V
= 10V
7V
GS
V
= 10V
GS
6V
I
= 36A
D
5.5V
I
= 18A
D
5V
4.5V
4
0.7
0.4
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
ID = 18A Value vs. Drain Current
Fig. 6. Drain Current vs. Case
Tem perature
3.4
3
40
35
30
25
20
15
10
5
V
= 10V
GS
T
J
= 125ºC
2.6
2.2
1.8
1.4
1
T
= 25ºC
60
J
0
0.6
-50
-25
0
25
50
75
100 125 150
10
20
30
40
50
70
I D - Amperes
TC - Degrees Centigrade
© 2006 IXYS All rights reserved
IXFH36N50P IXFT 36N50P
IXFV 36N50P IXFV 36N50PS
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
55
50
45
40
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
T
J
= -40ºC
25ºC
125ºC
T
J
= 125ºC
25ºC
-40ºC
0
4
4.5
5
5.5
6
6.5
7
0
10
20
30
40
50
60
70
80
90
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
0
V
= 250V
DS
I
I
= 18A
D
G
= 10mA
T = 125ºC
J
T = 25ºC
J
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
10 20 30 40 50 60 70 80 90 100
VS D - Volts
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
100
100
R
Limit
DS(on)
C
C
iss
25µs
100µs
10
oss
rss
1ms
DC
10ms
T
T
= 150ºC
J
f = 1MHz
C
= 25ºC
C
10
1
0
5
10
15
20
25
30
35
40
10
100
1000
VD S - Volts
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH36N50P IXFT 36N50P
IXFV 36N50P IXFV 36N50PS
Fig. 13. Maxim um Transient Therm al Resistance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
PLUS220 (IXFV) Outline
IXYSREF: F_36N50P(7J)03-29-06-D.xls
© 2006 IXYS All rights reserved
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