IXFH36N60P [IXYS]
PolarHV HiPerFET Power MOSFET; PolarHV HiPerFET功率MOSFET
| 型号： | IXFH36N60P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV HiPerFET Power MOSFET |
| 文件： | 总4页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM HiPerFET
Power MOSFET
IXFH 36N60P
IXFK 36N60P
IXFT 36N60P
VDSS = 600 V
ID25 = 36 A
R
≤ 190 mΩ
trrDS(on)≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 150° C
600
600
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
D
S
D (TAB)
ID25
IDM
TC =25° C
36
80
A
A
TO-268 (IXFT) Case Style
TC = 25° C, pulse width limited by TJM
IAR
TC =25° C
36
A
EAR
EAS
TC =25° C
TC =25° C
50
mJ
J
1.5
G
S
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
,
20
V/ns
D (TAB)
TC =25° C
650
W
TO-264 AA (IXFK)
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Md
Mounting torque (TO-247 & TO-264)
1.13/10 Nm/lb.in.
G
Weight
TO-247
TO-268
TO-264
6
5
10
g
g
g
D
S
(TAB)
G = Gate
D
= Drain
S = Source Tab = Drain
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
Features
Symbol
Test Conditions
Characteristic Values
l
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
l
l
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = 30 VDC, VDS = 0
600
V
V
3.0
5.0
l
200
nA
IDSS
VDS = VDSS
VGS = 0 V
100
1000
µA
µA
Advantages
TJ = 125° C
l
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
190 mΩ
Easy to mount
Space savings
High power density
l
l
DS99383E(02/06)
© 2006 IXYS All rights reserved
IXFH 36N60P IXFK 36N60P
IXFT 36N60P
Symbol
gfs
Test Conditions
Characteristic Values
TO-247 AD (IXFH) Outline
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
25
39
S
Ciss
Coss
Crss
5800
570
30
pF
pF
pF
1
2
3
td(on)
tr
td(off)
tf
30
25
80
22
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 ID25
RG =2 Ω (External)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Qg(on)
Qgs
102
34
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
36
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
0.19 °C/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
RthCS
RthCS
TO-247
TO-264
0.21
0.15
°C/W
°C/W
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
Symbol
IS
Test Conditions
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
VGS = 0 V
Repetitive
36
80
A
TO-264 (IXFK) Outline
ISM
A
V
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25A, -di/dt = 100 A/µs
200
ns
QRM
IRM
VR = 100V
0.8
6.0
µC
A
TO-268 (IXFT)Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXFH 36N60P IXFK 36N60P
IXFT 36N60P
Fig. 2. Extended Output Characteristics
Fig. 1. Output Characteristics
@ 25
@ 25 C
º
º
C
36
32
28
24
20
16
12
8
90
80
70
60
50
40
30
20
10
0
V
GS
= 10V
8V
V
GS
= 10V
7V
7V
6V
6V
4
5V
5V
0
0
0
0
1
2
3
4
5
6
7
16
90
0
3
6
9
12 15 18 21 24 27 30
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125
Fig. 4. RDS(on Normalized to 0.5 ID25
)
º
C
Value vs. Junction Temperature
36
32
28
24
20
16
12
8
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
V
= 10V
7V
GS
V
GS
= 10V
6V
5V
I
= 36A
D
I
= 18A
D
4
0.7
0.4
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to
0.5 ID25 Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
40
35
30
25
20
15
10
5
V
= 10V
GS
T = 125ºC
J
T = 25ºC
J
0
-50
-25
0
25
50
75
100 125 150
10
20
30
40
50
60
70
80
I D - Amperes
TC - Degrees Centigrade
© 2006 IXYS All rights reserved
IXFH 36N60P IXFK 36N60P
IXFT 36N60P
Fig. 8. Transconductance
Fig. 7. Input Admittance
55
50
45
40
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
T = -40ºC
J
25ºC
125ºC
T = 125ºC
J
25ºC
-40ºC
0
3.5
0.4
0
4
4.5
5
VG S - Volts
5.5
6
6.5
1.2
40
0
10
20
30 40
I D - Amperes
50
60
70
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
0
V
= 300V
DS
I
I
= 18A
D
G
= 10mA
T = 125ºC
J
T = 25ºC
J
0
10 20 30 40 50 60 70 80 90 100 110
0.5
0.6
0.7
VS D - Volts
0.8 0.9
1
1.1
Q G - nanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
1.00
0.10
0.01
10000
1000
100
C
iss
C
oss
f = 1MHz
C
rss
10
5
10
15
20
VD S - Volts
25
30
35
0.1
1
Pulse Width - milliseconds
10
100
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
相关型号：
IXFH40N30S
Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
IXYS
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