IXFH40N30Q [IXYS]
HiPerFET Power MOSFETs Q-Class; HiPerFET功率MOSFET Q系列
| 型号： | IXFH40N30Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Q-Class |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Q-Class
IXFH 40N30Q
IXFT 40N30Q
VDSS = 300 V
ID25 = 40 A
RDS(on) = 80 mW
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Preliminary data sheet
TO-268 (IXFT) Case Style
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
300
300
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
G
S
(TAB)
ID25
IDM
IAR
TC = 25°C
40
160
40
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
TO-247 AD (IXFH)
EAR
EAS
TC = 25°C
TC = 25°C
30
mJ
J
1.0
(TAB)
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
PD
TC = 25°C
300
W
G = Gate
D = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
S = Source
TAB = Drain
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
Features
Md
1.13/10 Nm/lb.in.
• IXYS advanced low Qg process
• Internationalstandardpackages
• Low gate charge and capacitance
- easier to drive
Weight
TO-247
TO-268
6
4
g
g
- faster switching
• Low RDS (on)
Symbol
TestConditions
CharacteristicValues
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL94V-0
flammabilityclassification
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
300
2.0
V
V
4
±100
nA
Advantages
IDSS
TJ = 25°C
TJ = 125°C
25
1
mA
mA
V
GS = 0 V
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
• Easy to mount
• Space savings
• High power density
RDS(on)
80 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98504A(6/99)
1 - 2
IXFH 40N30Q
IXFT 40N30Q
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
TO-247 AD (IXFH) Outline
VDS = 10 V; ID = 0.5 ID25, pulse test
22
30
S
Ciss
Coss
Crss
3100
650
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
150
td(on)
tr
td(off)
tf
20
35
40
12
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1.5 W (External)
Qg(on)
Qgs
95 140
nC
nC
nC
Dim. Millimeter
Inches
Min. Max. Min. Max.
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
25
54
35
70
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
Qgd
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
RthJC
RthCK
0.42
K/W
K/W
E
F
4.32 5.49 0.170 0.216
(TO-247)
0.25
5.4
6.2 0.212 0.244
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
J
K
1.0
1.4 0.040 0.055
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Symbol
IS
TestConditions
N
1.5 2.49 0.087 0.102
VGS = 0 V
40
160
1.5
A
ISM
Repetitive;
A
V
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
QRM
IRM
250
ns
mC
A
IF = IS-di/dt = 100 A/ms, VR = 100 V
0.85
8
TO-268AA (D3 PAK)
Min. Recommended Footprint
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相关型号：
IXFH40N30S
Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
IXYS
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