IXFH36N55Q2 [IXYS]
HiPerFET Power MOSFETs; HiPerFET功率MOSFET
| 型号： | IXFH36N55Q2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs |
| 文件： | 总5页 (文件大小：558K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
IXFH36N55Q2 VDSS
= 550 V
ID25
=
36 A
RDS(on) = 0.18 Ω
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
Low Rg, High dv/dt, Low trr
trr ≤ 250 ns
Preliminary Data Sheet
TO-247 AD (IXFH)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
T
= 25°C to 150°C
550
550
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
(TAB)
VGS
VGSM
Continuous
Transient
30
40
V
V
ID25
IDM
IAR
T
= 25°C
36
144
36
A
A
A
TC = 25°C, pulse width limited by TJM
G = Gate
S = Source
TCC = 25°C
TAB = Drain
Features
EAR
EAS
T
= 25°C
50
2.5
mJ
J
TCC = 25°C
z
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low RDS (on), low Qg
Avalanche energy and current rated
Fast intrinsic rectifier
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
20
V/ns
z
z
PD
TC = 25°C
560
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z
z
z
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
°C
Applications
Md
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
z
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
z
Weight
Symbol
6
g
z
z
z
Advantages
TestConditions
Characteristic Values
z
Easy to mount
Space savings
High power density
(TJ = 25°C, unless otherwise specified)
z
min. typ. max.
z
VDSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
550
2.5
V
V
VGS(th)
5.0
IGSS
IDSS
VGS = 30 VDC, VDS = 0
100 nA
VDS = V
T = 25°C
25 µA
VGS = 0DVSS
TJJ = 125°C
1
mA
RDS(on)
V
= 10 V, ID = 0.5 • I
0.18
Ω
PuGSlse test, t ≤ 300 µs,Dd25uty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
DS99074A(04/04)
IXFH36N55Q2
TO-247 AD (IXFH) Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
15
26
S
1
2
3
Terminals:
1 - Gate
Ciss
Coss
Crss
4100
660
pF
pF
pF
2 - Drain
VGS = 0 V, VDS = 25 V, f = 1 MHz
3 - Source
Tab - Drain
160
td(on)
tr
td(off)
tf
17
13
42
8
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Dim.
Millimeter
Inches
RG = 2 Ω (External),
Min.
Max.
Min.
Max.
A
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
A
A12
Qg(on)
Qgs
110
23
nC
nC
nC
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
b
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
52
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
RthJC
RthCK
0.22 K/W
e
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
L
L1
0.25
K/W
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
5.49
.170
.216
6.15 BSC
242 BSC
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
min.
typ. max.
VGS = 0 V
36
A
A
ISM
Repetitive; pulse width limited by TJM
144
1.5
VSD
IF = IS, VGS = 0 V,
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
250
ns
µC
A
QRM
IRM
1
9
IF = 25A -di/dt = 100 A/µs, VR = 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1 6,162,665
6,534,343
6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
IXFH36N55Q2
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
º
º
@ 25 C
@ 25 C
36
33
30
27
24
21
18
15
12
9
90
80
70
60
50
40
30
20
10
0
V
= 10V
V
GS
= 10V
8V
GS
8V
7V
7V
6V
6V
5V
4V
6
5V
3
0
0
0
0
1
2
3
4
5
6
7
16
90
0
3
6
9
12 15 18 21 24 27 30
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125
Fig. 4. RDS(on Normalized to 0.5 ID25
Value vs. Junction Temperature
)
º
C
36
33
30
27
24
21
18
15
12
9
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
V
= 10V
8V
7V
GS
V
= 10V
GS
6V
I
= 36A
D
5V
4V
I
= 18A
D
6
0.7
0.4
3
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to
0.5 ID25 Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
40
35
30
25
20
15
10
5
V
= 10V
GS
T = 125ºC
J
T = 25ºC
J
0.7
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100 125 150
I D - Amperes
TC - Degrees Centigrade
© 2004 IXYS All rights reserved
IXFH36N55Q2
Fig. 8. Transconductance
Fig. 7. Input Admittance
50
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
T = -40ºC
J
25ºC
125ºC
T = 125ºC
J
25ºC
-40ºC
0
0
0
5
10 15 20 25 30 35 40 45 50 55
3
0.4
0
3.5
4
4.5
5
5.5
6
6.5
1.2
40
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
100
90
80
70
60
50
40
30
20
10
0
10
9
8
7
6
5
4
3
2
1
0
V
= 275V
DS
I
I
= 18A
D
G
= 10mA
T = 125ºC
J
T = 25ºC
J
0.5
0.6
0.7
0.8
0.9
1
1.1
0
10 20 30 40 50 60 70 80 90 100 110
VS D - Volts
Q G - nanoCoulombs
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
100
1000
100
10
f = 1MHz
T = 150ºC
J
T
C
= 25ºC
R
Limit
DS(on)
C
C
iss
25µs
100µs
1ms
oss
rss
10ms
C
DC
1
5
10
15
20
25
30
35
10
100
1000
VD S - Volts
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH36N55Q2
Fig. 13. Maximum Transient Thermal Resistance
1.000
0.100
0.010
0.001
0.1
1
10
100
1000
10000
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
相关型号：
IXFH40N30S
Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
IXYS
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