IXFA4N100Q-TRL [IXYS]
MOSFET N-CH 1000V 4A TO-263;
| 型号： | IXFA4N100Q-TRL |
| 厂家： | 
IXYS CORPORATION |
| 描述： | MOSFET N-CH 1000V 4A TO-263 |
| 文件： | 总5页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiperFETTM
Power MOSFETs
Q-Class
VDSS = 1000V
ID25 = 4A
RDS(on) ≤ 3.0Ω
IXFA4N100Q
IXFP4N100Q
N-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXFA)
Fast Intrinsic Diode
G
S
Symbol
Test Conditions
Maximum Ratings
D (Tab)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1000
1000
V
V
TO-220AB (IXFP)
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
ID25
IDM
TC = 25°C
4
16
A
A
TC = 25°C, Pulse Width Limited by TJM
G
D
D (Tab)
= Drain
IA
EAS
TC = 25°C
TC = 25°C
4
700
A
mJ
S
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
5
V/ns
W
G = Gate
S = Source
D
Tab = Drain
150
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
z International Standard Packages
z Avalanche Rated
MC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220)
10..65/2.2..14.6
1.13/10
Nm/lb.in.
Nm/lb.in.
z Fast Intrinsic Diode
z Low QG
z Low RDS(on)
z Low Drain-to-Tab Capacitance
z Low Package Inductance
Weight
TO-263
TO-220
2.5
3.0
g
g
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
1000
2.5
Typ.
Max.
z
High Power Density
Easy to Mount
Space Savings
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
V
V
z
VDS = VGS, ID = 1.5mA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS = 0V
4.5
± 100 nA
Applications
IDSS
50 μA
1 mA
z
TJ = 125°C
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
z
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
3.0
Ω
z
Power Supplies
DC Choppers
Temperature and Lighting Controls
z
z
DS98705B(04/11)
© 2011 IXYS CORPORATION, All Rights Reserved
IXFA4N100Q
IXFP4N100Q
Symbol
Test Conditions
Characteristic Values
TO-263 Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
1.5
2.5
S
Ciss
Coss
Crss
1050
120
30
pF
pF
pF
td(on)
tr
td(off)
tf
17
15
32
18
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7Ω (External)
Qg(on)
Qgs
39
9
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
23
RthJC
RthCS
0.80 °C/W
°C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
4
A
A
V
TO-220 Outline
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
16
1.5
trr
QRM
IRM
250 ns
IF = IS, -di/dt = 100A/μs
VR = 100V, VGS = 0V
0.52
1.80
μC
A
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Pins: 1 - Gate
2 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFA4N100Q
IXFP4N100Q
Figure 1. Output Characteristics at 25OC
4
Figure 2. Extended Output Characteristics at 125OC
6
5
4
3
2
1
0
T
= 25°C
V
= 10V
J
GS
V
= 10V
T
= 25°C
GS
J
9V
8V
9V
8V
7V
3
2
1
0
7V
6V
6V
5V
5V
0
4
8
12
16
20
0
2
4
6
8
10
VCE - Volts
VDS - Volts
Figure 4. Admittance Curves
Figure 3. Output characteristics at 125°C
4
4
TJ = 125°C
V
= 10V
GS
9V
8V
3
3
2
1
0
7V
O
T
= 125 C
J
2
1
0
6V
5V
O
T
= 25
C
J
0
5
10
VDS - Volts
15
20
3
4
5
6
7
8
VGS - Volts
Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ
2.4
Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID
2.4
V
= 10V
GS
V
I
= 10V
GS
= 2A
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
D
T
J
= 125°C
T
= 25°C
J
0
1
2
3
4
5
6
25
50
75
100
125
150
TJ - Degrees C
ID - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
IXFA4N100Q
IXFP4N100Q
Figure 8. Capacitance Curves
Figure 7. Gate Charge
2000
1000
15
12
9
Ciss
VDS = 600 V
ID = 3 A
f = 1MHz
IG = 10 mA
Coss
Crss
100
10
6
3
0
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
VDS - Volts
Gate Charge - nC
Figure 9. Forward Voltage Drop of the Intrinsic Diode
5
10
4
8
60
6
3
2
1
0
TJ = 125OC
4
TJ = 25OC
2
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25 50 75 100 125 150
VSD - Volts
TC - Degrees Centigrade
Figure 11. Transient Thermal Resistance
1.00
0.10
0.01
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXT_4N100Q (4U)04-01-11-A
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
相关型号：
IXFA4N100QSN
Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3/2
IXYS
IXFA4N60P3
Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263AA, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明