IXBT42N170-TRL [IXYS]
Insulated Gate Bipolar Transistor,;型号: | IXBT42N170-TRL |
厂家: | IXYS CORPORATION |
描述: | Insulated Gate Bipolar Transistor, 栅 |
文件: | 总5页 (文件大小:175K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
VCES = 1700V
IC90 = 42A
VCE(sat) ≤ 2.8V
IXBH42N170
IXBT42N170
TO-247 (IXBH)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TC = 25°C to 150°C
1700
1700
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
G
C (TAB)
C
E
IC25
ILRMS
IC90
ICM
TC = 25°C
80
75
A
A
A
A
Terminal Current Limit
TC = 90°C
TO-268 (IXBT)
42
TC = 25°C, 1ms
300
SSOA
VGE = 15V, TVJ = 125°C, RG = 10Ω
ICM = 100
A
V
G
E
(RBSOA)
Clamped inductive load
VCES ≤ 1350
C (TAB)
PC
TC = 25°C
360
W
G = Gate
E = Emitter
C
= Collector
TJ
-55 ... +150
150
°C
°C
°C
TAB = Collector
TJM
Tstg
-55 ... +150
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300
260
°C
°C
Features
z
High blocking voltage
Md
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
z International standard packages
z Low conduction losses
Weight
TO-247
TO-268
6
4
g
g
Advantages
z Low gate drive requirement
z High power density
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Applications:
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
1700
2.5
V
V
z Switched-mode and resonant-mode
power supplies
5.5
z Uninterruptible power supplies (UPS)
z Laser generator
ICES
VCE = 0.8 • VCES
VGE = 0V
50 μA
1.5 mA
z Capacitor discharge circuit
z AC switches
TJ = 125°C
IGES
VCE = 0V, VGE = ± 20V
±100 nA
VCE(sat)
IC = 42A, VGE = 15V, Note 1
2.8
V
V
TJ = 125°C
2.7
© 2008 IXYS CORPORATION, All rights reserved
DS98710C(10/08)
IXBH42N170
IXBT42N170
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-247 (IXBH) Outline
(TJ = 25°C unless otherwise specified)
gfS
IC = 42A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
24
32
S
Cies
Coes
Cres
3990
225
70
pF
pF
pF
∅ P
1
2
3
Qg
188
29
nC
nC
nC
Qge
Qgc
IC = 42A, VGE = 15V, VCE = 0.5 • VCES
76
e
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
37
139
340
665
ns
ns
ns
ns
Terminals: 1 - Gate
2 - Drain
Tab - Drain
Resistive Switching times, TJ = 25°C
3 - Source
IC = 42A, VGE = 15V
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
VCE = 850V, RG = 10Ω
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
36
188
330
740
ns
ns
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Resistive Switching times, TJ = 125°C
IC = 42A, VGE = 15V
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
VCE = 850V, RG = 10Ω
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
RthJC
RthCS
0.35 °C/W
°C/W
.780 .800
.177
(TO-247)
0.25
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
TO-268 (IXBT) Outline
Reverse Diode
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
VF
IF = 42A, VGE = 0V
2.8
V
IF = 21A, VGE = 0V, -diF/dt = 100A/μs
trr
1.32
36
μs
VR = 100V
IRM
A
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
IXBH42N170
IXBT42N170
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
300
270
240
210
180
150
120
90
90
80
70
60
50
40
30
20
10
0
VGE = 15V
13V
11V
VGE = 15V
13V
9V
11V
9V
7V
5V
60
7V
30
0
0
2
4
6
8
10
12
14
16
18
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
90
80
70
60
50
40
30
20
10
0
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE = 15V
13V
11V
VGE = 15V
I C = 84A
9V
I C = 42A
7V
5V
I C = 21A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
160
140
120
100
80
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
TJ = 25ºC
TJ = - 40ºC
25ºC
125ºC
I C = 84A
60
42A
40
20
21A
0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
VGE - Volts
5
6
7
8
9
10
11
12
13
14
15
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: B_42N170(7N)10-07-08
IXBH42N170
IXBT42N170
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
Fig. 7. Transconductance
55
50
45
40
35
30
25
20
15
10
5
120
110
100
90
80
70
60
50
40
30
20
10
0
TJ = - 40ºC
TJ = 25ºC
25ºC
125ºC
TJ = 125ºC
0
0
20
40
60
80
100
120
140
160
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2
VF - Volts
IC - Amperes
Fig. 9. Gate Charge
Fig. 10. Capacitance
16
14
12
10
8
10,000
1,000
100
VCE = 850V
I
I
C = 42A
C
ies
G = 10mA
C
oes
6
4
C
res
2
= 1 MHz
5
f
10
0
0
10
15
20
25
30
35
40
0
20
40
60
80
100 120 140 160 180 200
VCE - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Reverse-Bias Safe Operating Area
110
100
90
80
70
60
50
40
30
20
10
0
1.00
0.10
0.01
TJ = 125ºC
RG = 10Ω
dV / dt < 10V / ns
200
400
600
800
1000
1200
1400
1600
1800
0.0001
0.001
0.01
0.1
1
10
VCE - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXBH42N170
IXBT42N170
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
360
320
280
240
200
160
120
80
360
320
280
240
200
160
120
80
RG = 10Ω
RG = 10Ω
VGE = 15V
VGE = 15V
VCE = 850V
TJ = 125ºC
VCE = 850V
I C = 84A
TJ = 25ºC
I C = 42A
40
0
25
35
45
55
65
75
85
95
105 115 125
20 25 30 35 40 45 50 55 60 65 70 75 80 85
IC - Amperes
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
900
800
700
600
500
400
300
380
800
700
600
500
400
300
200
100
160
140
120
100
80
tf
t
d(off) - - - -
tr
t
d(on) - - - -
360
340
320
300
280
260
RG = 10Ω, VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 850V
VCE = 850V
I C = 42A
I C = 84A
60
I C = 42A
I C = 84A
40
20
10
15
20
25
30
35
40
45
50
55
25
35
45
55
65
75
85
95 105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
1200
1100
1000
900
1800
1600
1400
1200
1000
800
1300
1200
1100
1000
900
440
t f
t
420
400
380
360
340
320
300
280
260
240
d(off) - - - -
t f
td(off
) - - - -
RG = 10Ω, VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 850V
VCE = 850V
800
I C = 42A
800
700
700
I C = 84A
600
600
600
500
400
TJ = 25ºC, 125ºC
500
400
200
400
300
300
0
20 25 30 35 40 45 50 55 60 65 70 75 80 85
IC - Amperes
10
15
20
25
30
35
40
45
50
55
RG - Ohms
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: B_42N170(7N)10-07-08
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