IXBT42N300HV [IXYS]
Insulated Gate Bipolar Transistor, 104A I(C), 3000V V(BR)CES, N-Channel,;
| 型号： | IXBT42N300HV |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 104A I(C), 3000V V(BR)CES, N-Channel, 栅 |
| 文件： | 总6页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
High Voltage, BiMOSFETTM
Monolithic Bipolar MOS
Transistor
VCES = 3000V
IC110 = 42A
VCE(sat) 3.0V
IXBT42N300HV
IXBH42N300HV
TO-268HV (IXBT)
G
E
Symbol
VCES
Test Conditions
Maximum Ratings
C (Tab)
TC = 25°C to 150°C
3000
3000
V
V
VCGR
TJ = 25°C to 150°C, RGE = 1M
TO-247HV (IXBH)
VGES
VGEM
Continuous
Transient
± 25
± 35
V
V
IC25
IC110
ICM
TC = 25°C
104
42
A
A
A
TC = 110°C
TC = 25°C, 1ms
G
E
400
C (Tab)
C
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 20
ICM = 84
1500
A
V
Clamped Inductive Load
G = Gate
E = Emitter
C
= Collector
TSC
(SCSOA)
VGE = 15V, TJ = 125°C,
RG = 82, VCE =1500V, Non-Repetitive
10
μs
Tab = Collector
PC
TC = 25°C
500
W
TJ
-55 ... +150
150
°C
°C
°C
Features
TJM
Tstg
High Voltage Package
High Blocking Voltage
-55 ... +150
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
High Peak Current Capability
Low Saturation Voltage
FBSOA
Md
Mounting Torque (TO-247HV)
1.13/10
Nm/lb.in
SCSOA
Weight
TO-268HV
TO-247HV
4
6
g
g
Advantages
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Low Gate Drive Requirement
High Power Density
Min.
3000
3.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 1mA, VGE = 0V
IC = 1mA, VCE = VGE
VCE = 0.8 • VCES, VGE = 0V
V
V
5.0
50 μA
μA
Applications
TJ = 125°C
TJ = 125°C
250
Laser Generators
Capacitor Discharge Circuits
AC Switches
Protection Circuits
IGES
VCE = 0V, VGE = ± 25V
±200 nA
VCE(sat)
IC = 42A, VGE = 15V, Note 1
2.5
3.1
3.0
V
V
© 2014 IXYS CORPORATION, All Rights Reserved
DS100512A(12/14)
IXBT42N300HV
IXBH42N300HV
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-268HV Outline
Min.
Typ.
Max.
E
A
E1
L2
C2
gfS
IC = 42A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
Gate Input Resistance
28
45
S
3
D1
3
D
H
D2
Cies
Coes
Cres
4780
170
56
pF
pF
pF
1
2
D3
2
1
A1
L4
C
e
e
b
RGi
3.0
PINS:
1 - Gate 2 - Emitter
3 - Collector
Qg
200
28
nC
nC
nC
Qge
Qgc
IC = 42A, VGE = 15V, VCE = 1000V
L3
A2
L
75
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
72
330
445
610
ns
ns
ns
ns
Resistive Switching Times, TJ = 25°C
IC = 42A, VGE = 15V
VCE = 1500V, RG = 20
72
580
460
490
ns
ns
ns
ns
Resistive Switching Times, TJ = 125°C
IC = 42A, VGE = 15V
VCE = 1500V, RG = 20
RthJC
RthCS
0.25 °C/W
°C/W
TO-247HV
0.21
TO-247HV Outline
E1
E
A
R
0P
0P1
A2
Reverse Diode
Q
S
D1
D2
D
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
4
Min.
Typ.
Max
1
2
3
L1
A3
2X
D3
VF
trr
IF = 42A, VGE = 0V, Note 1
IF = 21A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
2.5
V
μs
A
E2
E3
4X
A1
L
1.7
43
IRM
e
b
b1
c
e1
3X
3X
PINS:
1 - Gate 2 - Emitter
3, 4 - Collector
Note
1. Pulse test, t < 300s, duty cycle, d < 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1
4,835,592 4,931,844 5,049,961 5,237,481 6,162,665
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXBT42N300HV
IXBH42N300HV
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
90
80
70
60
50
40
30
20
10
0
320
280
240
200
160
120
80
V
= 25V
GE
V
= 25V
20V
GE
20V
15V
15V
10V
10V
40
5V
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
6
7
8
9
10
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
90
80
70
60
50
40
30
20
10
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 25V
GE
V
= 15V
GE
20V
15V
I
= 84A
C
10V
I
= 42A
C
I
= 21A
C
5V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
180
160
140
120
100
80
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
T
J
= 25ºC
T
J
= - 40ºC
25ºC
125ºC
I C = 84A
42A
60
40
21A
20
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
5
7
9
11
13
15
17
19
21
23
25
VGE - Volts
VGE - Volts
© 2014 IXYS CORPORATION, All Rights Reserved
IXBT42N300HV
IXBH42N300HV
Fig. 8. Forward Voltage Drop of Intrinsic Diode
Fig. 7. Transconductance
140
120
100
80
80
70
60
50
40
30
20
10
0
T
J
= - 40ºC
T
J
= 25ºC
25ºC
T
J
= 125ºC
125ºC
60
40
20
0
0
20
40
60
80
100
120
140
160
180
200
0
0.5
1
1.5
2
2.5
3
3.5
VF - Volts
IC - Amperes
Fig. 9. Gate Charge
Fig. 10. Capacitance
16
14
12
10
8
10,000
1,000
100
V
I
= 1000V
CE
= 42A
C
C
ies
I
= 10mA
G
C
oes
6
4
C
res
2
= 1 MHz
5
f
0
10
0
20
40
60
80
100
120
140
160
180
200
0
10
15
20
25
30
35
40
VCE - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Reverse-Bias Safe Operating Area
1
90
80
70
60
50
40
30
20
10
0
0.1
0.01
T
= 125ºC
J
R
= 20Ω
G
dv / dt < 10V / ns
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
250
500
750 1000 1250 1500 1750 2000 2250 2500 2750 3000
VCE - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT42N300HV
IXBH42N300HV
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
650
600
550
500
450
400
350
300
250
650
600
550
500
450
400
350
300
250
R
= 20Ω , V = 15V
GE
G
V
= 1500V
CE
T
J
= 125ºC
R
= 20Ω , V = 15V
GE
G
V
= 1500V
CE
I
= 84A
C
I
= 42A
C
T
J
= 25ºC
25
35
45
55
65
75
85
95
105
115
125
40
45
50
55
60
65
70
75
80
85
TJ - Degrees Centigrade
IC - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
800
700
600
500
400
300
200
500
480
460
440
420
400
380
1800
1600
1400
1200
1000
800
360
t f
t
d(off) - - - -
t r
t
d(on) - - - -
320
280
240
200
160
120
80
R
G
= 20Ω, V = 15V
GE
T
J
= 125ºC, V = 15V
GE
V
= 1500V
CE
V
= 1500V
CE
I
= 84A
C
I
= 42A
C
I
= 42A
C
600
I
= 84A
75
C
400
200
40
25
35
45
55
65
85
95
105
115
125
20
40
60
80
100
120
140
160
180
TJ - Degrees Centigrade
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
1100
1000
900
800
700
600
500
400
300
200
3600
3200
2800
2400
2000
1600
1200
800
800
700
600
500
400
300
200
500
t f
t
t f
t d(off
) - - - -
d(off) - - - -
480
460
440
420
400
380
R
G
= 20Ω, V = 15V
T = 125ºC, V = 15V
J GE
GE
V
= 1500V
V
= 1500V
CE
CE
I
= 42A
C
T
J
= 25ºC
T
J
= 125ºC
I
= 84A
C
400
0
40
45
50
55
60
65
70
75
80
85
20
40
60
80
100
120
140
160
180
RG - Ohms
IC - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
IXBT42N300HV
IXBH42N300HV
Fig. 20. Forward-Bias Safe Operating Area @ TC = 115ºC
Fig. 19. Forward-Bias Safe Operating Area @ TC = 25ºC
1000
100
10
1000
100
10
V Limit
CE(sat)
V
Limit
CE(sat)
25µs
100µs
25µs
100µs
1
1
1ms
1ms
10ms
0.1
0.1
100ms
10ms
DC
T = 150ºC
T = 150ºC
J
J
100ms
0.01
0.001
0.01
0.001
T
= 25ºC
T
= 115ºC
C
C
DC
Single Pulse
Single Pulse
1
10
100
1000
10000
1
10
100
1000
10000
VCE - Volts
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: B_42N300(8M)11-09-12-A
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