IXBT6N170 [IXYS]
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor; 高电压，高增益BIMOSFET⑩单片双极型晶体管MOS
| 型号： | IXBT6N170 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor |
| 文件： | 总2页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Information
VCES = 1700 V
IC25 12 A
VCE(sat) = 3.6 V
HighVoltage,HighGain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH 6N170
IXBT 6N170
=
Symbol
TestConditions
Maximum Ratings
TO-268(IXBT)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
1700
V
V
G
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E
(TAB)
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
12
6
24
A
A
A
TO-247AD(IXBH)
SSOA
VGE = 15 V, TVJ = 125°C, RG = 33 Ω
ICM
=
=
16
A
V
TAB)
(RBSOA)
Clamped inductive load
VCES
1350
G
C
E
PC
TC = 25°C
75
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate,
C = Collector,
E=Emitter,
TAB = Collector
Features
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
z
High Blocking Voltage
JEDEC TO-268 surface and
JEDEC TO-247 AD
z
Maximum Tab temperature for soldering SMD devices for 10 s
260
°C
z
Low conduction losses
Md
Mounting torque (M3)
1.13/10Nm/lb.in.
z
z
High current handling capability
Weight
TO-247 AD
TO-268
6
4
g
g
MOS Gate turn-on
- drive simplicity
z
Molding epoxies meet UL 94 V-0
flammability classification
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
AC motor speed control
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
BVCES
VGE(th)
I
= 250 µA, VGE = 0 V
1700
3.0
V
V
ICC = 250 µA, V = VGE
6
power supplies
CE
z
Capacitor discharge circuits
ICES
VCE = 0.8 VCES
VGE = 0 V
T = 25°C
TJJ = 125°C
10 µA
Advantages
100 µA
z
High power density
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
z
Suitable for surface mounting
z
VCE(sat)
IC = IC90, VGE = 15 V
3.0
3.3
3.6
V
V
Easy to mount with 1 screw,
(isolated mounting screw hole)
TJ = 125°C
DS99004(02/03)
© 2003 IXYS All rights reserved
IXBH 6N170
IXBT 6N170
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; V = 10 V,
3
4
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %
P
Cies
Coes
Cres
330
23
6
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
Qg
Qge
Qgc
20
3.6
8
nC
nC
nC
e
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
td(on)
tri
td(off)
tfi
25
18
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
600 1000 ns
1110 1600 ns
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 120 Ω
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Eoff
4
6
mJ
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
td(on)
tri
Eon
td(off)
tfi
25
20
0.7
660
1600
ns
ns
mJ
ns
ns
.780 .800
.177
P
3.55
5.89
3.65
.140 .144
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 120 Ω
Q
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Eoff
5
mJ
TO-268 Outline
RthJC
RthCK
1.65 K/W
K/W
(TO-247)
0.25
ReverseDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V, Pulse test,
< 300 us, duty cycle d < 2%
3.0
V
t
IRM
trr
IF = 6 A, VGE = 0 V, -diF/dt = 50 A/us
vR = 100A
6
360
A
ns
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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