IXBX25N250 [LITTELFUSE]
Insulated Gate Bipolar Transistor,;
| 型号： | IXBX25N250 |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 栅 瞄准线 功率控制 晶体管 |
| 文件： | 总7页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
VCES = 2500V
IC90 = 25A
VCE(sat) ≤ 3.3V
IXBX25N250
Symbol
VCES
Test Conditions
Maximum Ratings
PLUS247TM
TC = 25°C to 150°C
2500
2500
V
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
G
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
55
25
180
A
A
A
C
Tab
E
G = Gate
C = Collector
E
= Emitter
Tab = Collector
SSOA
(RBSOA)
PC
VGE = 15V, TVJ = 125°C, RG = 4.7Ω
Clamped Inductive Load
TC = 25°C
ICM = 80
VCES ≤ 2000
300
A
V
W
TJ
-55 ... +150
150
°C
°C
°C
Features
TJM
Tstg
z
High Blocking Voltage
-55 ... +150
z International Standard Package
z Low Conduction Losses
TL
TSOLD
1.6mm (0.062 in.) From Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
FC
Mounting Force
20..120 / 4.5..27
N/lb.
g
Advantages
Weight
6
z Low Gate Drive Requirement
z High Power Density
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
z Uninterruptible Power Supplies (UPS)
z Laser Generator
Min.
Typ. Max.
BVCES
IC = 250μA, VGE = 0V
2500
V
V
z Capacitor Discharge Circuit
z AC Switches
VGE(th)
ICES
IC = 250μA, VCE = VGE
2.5
5.0
VCE = 0.8 • VCES, VGE = 0V
50 μA
mA
TJ = 125°C
TJ = 125°C
3
IGES
VCE = 0V, VGE = ± 20V
±100 nA
VCE(sat)
IC = IC90, VGE = 15V, Note 1
3.3
V
V
3.4
© 2010 IXYS CORPORATION, All Rights Reserved
DS100044A(10/10)
IXBX25N250
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
PLUS 247TM (IXBX) Outline
Min.
Typ.
Max.
gfS
IC = 25A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
11
18
S
Cies
Coes
Cres
2450
96
pF
pF
pF
35
Qg
103
17
nC
nC
nC
Qge
Qgc
IC = 25A, VGE = 15V, VCE = 1000V
43
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
55
240
145
640
ns
ns
ns
ns
Resistive Switching times, TJ = 25°C
Terminals: 1 - Gate
2 - Collector
IC = 25A, VGE = 15V
3 - Emitter
VCE = 1250V, RG = 4.7Ω
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
54
640
140
510
ns
ns
ns
ns
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Resistive Switching times, TJ = 125°C
IC = 25A, VGE = 15V
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
VCE = 1250V, RG = 4.7Ω
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
RthJC
RthCS
0.42 °C/W
°C/W
0.15
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
Reverse Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
VF
IF = 25A, VGE = 0V
2.3
V
trr
1.6
μs
IF = 25A, -diF/dt = 100A/μs
IRM
37.2
A
VR = 100V, VGE = 0V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
*Additional provisions for lead to lead voltage isolation are required at VDS > 1200V.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXBX25N250
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
50
45
40
35
30
25
20
15
10
5
VGE = 25V
VGE = 25V
20V
250
200
150
100
50
20V
15V
15V
10V
10V
0
0
0
2
4
6
8
10
12
14
16
18
20
0
0
5
0.5
1
1.5
2
2.5
3
3.5
4
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
50
45
40
35
30
25
20
15
10
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGE = 25V
VGE = 15V
20V
15V
I C = 50A
10V
I C = 25A
I C = 12.5A
5V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 6. Breakdown & Threshold Voltages
vs. Junction Temperature
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
TJ = 25ºC
BVCES
I C = 50A
25A
VGE(
)
th
12.5A
13
7
9
11
15
VGE - Volts
17
19
21
23
25
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
IXBX25N250
Fig. 7. Input Admittance
Fig. 8. Transconductance
60
50
40
30
20
10
0
30
25
20
15
10
5
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
0
4.0
0.6
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
3.0
40
0
5
10
15
20
25
30
35
40
45
50
55
60
65
VGE - Volts
IC - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
80
70
60
50
40
30
20
10
0
16
14
12
10
8
VCE = 1kV
I C = 25A
I
G = 10mA
TJ = 25ºC
6
TJ = 125ºC
4
2
0
0
10
20
30
40
50
60
70
80
90
100
110
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
VF - Volts
QG - NanoCoulombs
Fig. 12. Reverse-Bias Safe Operating Area
Fig. 11. Capacitance
10,000
1,000
100
90
80
70
60
50
40
30
20
10
0
f
= 1 MHz
C
ies
C
oes
TJ = 125ºC
RG = 4.7Ω
C
res
dv / dt < 10V / ns
10
250
500
750
1000
1250
1500
1750
2000
2250
2500
5
10
15
20
25
30
35
VCE - Volts
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBX25N250
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
0
RG = 4.7Ω, VGE = 15V
RG = 4.7Ω, VGE = 15V
VCE = 1250V
VCE = 1250V
TJ = 125ºC
I C = 25A
I C = 50A
TJ = 25ºC
10
25
4
15
20
25
30
IC - Amperes
35
40
45
50
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
1000
900
800
700
600
500
140
900
800
700
600
500
400
300
200
100
180
170
160
150
140
130
120
110
100
t f
t
d(off) - - - -
tr
t
d(on) - - - -
RG = 4.7Ω, VGE = 15V
TJ = 125ºC, VGE = 15V
120
100
80
VCE = 1250V
VCE = 1250V
I C = 25A, 50A
I C = 25A
I C = 50A
60
40
35
45
55
65
75
85
95
105
115
125
4
8
12
16
20
24
28
32
36
40
44
48
52
TJ - Degrees Centigrade
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
1100
900
700
500
300
100
200
180
160
140
120
100
700
600
500
400
300
200
1000
800
600
400
200
0
tf
td(off
) - - - -
t f
t
d(off) - - - -
TJ = 125ºC, VGE = 15V
RG = 4.7Ω, VGE = 15V
VCE = 1250V
VCE = 1250V
I C = 25A
I C = 50A
TJ = 125ºC, 25ºC
8
12
16
20
24
28
32
36
40
44
48
52
10
15
20
25
30
35
40
45
50
RG - Ohms
IC - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXBX25N250
Fig. 19. Maximum Transient Thermal Impedance
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: B_25N250(6P)9-30-08
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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