DSEI20 [IXYS]
Fast Recovery Epitaxial Diode (FRED); 快速恢复外延二极管（ FRED ）
| 型号： | DSEI20 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Fast Recovery Epitaxial Diode (FRED) |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEI 20 IFAVM = 17 A
VRRM = 1200 V
Fast Recovery
Epitaxial Diode (FRED)
trr
= 40 ns
TO-220 AC
C
A
VRSM
V
VRRM
V
Type
C
A
C
1200
1200
DSEI 20-12A
A = Anode, C = Cathode
Symbol
IFRMS
Test Conditions
Maximum Ratings
Features
①
International standard package
Glass passivated chips
Very short recovery time
Extremely low losses at high
switching frequencies
Low IRM-values
TVJ = TVJM
70
17
220
A
A
A
①
IFAVM
IFRM
①
TC = 85°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
①
①
IFSM
TVJ = 45°C; t = 10 ms (50 Hz), sine
130
140
A
A
t = 8.3 ms (60 Hz), sine
①
①
①
TVJ = 150°C; t = 10 ms (50 Hz), sine
110
120
A
A
Soft recovery behaviour
Epoxy meets UL 94V-0
t = 8.3 ms (60 Hz), sine
I2t
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
85
80
A2s
A2s
Applications
TVJ = 150°C; t = 10 ms (50 Hz), sine
60
60
A2s
A2s
t = 8.3 ms (60 Hz), sine
①
Antiparallel diode for high frequency
switching devices
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
①
①
①
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Ptot
Md
TC = 25°C
78
0.4...0.6
2
W
Nm
g
①
Mounting torque
Weight
①
①
①
Symbol
IR
Test Conditions
Characteristic Values
max.
typ.
Advantages
TVJ = 25°C
TVJ = 25°C
VR = VRRM
VR = 0.8 • VRRM
750
250
7
mA
mA
mA
①
High reliability circuit operation
①
Low voltage peaks for reduced
TVJ = 125°C VR = 0.8 • VRRM
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
VF
IF = 12 A;
TVJ = 150°C
TVJ = 25°C
1.87
2.15
V
V
①
①
VT0
rT
For power-loss calculations only
TVJ = TVJM
1.65
18.2
V
mW
①
space saving by reduced cooling
RthJC
RthJA
1.6
60
K/W
K/W
trr
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C
40
7
60
ns
A
IRM
VR = 540 V; IF = 20 A; -diF/dt = 100 A/ms
L £ 0.05 mH; TVJ = 100°C
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 2
DSEI 20, 1200V
70
A
6
µC
5
50
TVJ=100°C
VR= 540V
TVJ=100°C
VR= 540V
A
60
40
max.
typ.
IF=30A
IF=60A
IF=30A
IF=15A
50
40
30
20
10
0
IRM
IF=30A
IF=60A
IF=30A
IF=15A
4
3
2
1
0
IF
TVJ= 25°C
TVJ=100°C
TVJ=150°C
Qr
30
20
10
0
max.
typ.
V
1
10
-diF/dt
100
1000
0
200
-diF/dt
400
600
A/ s
0
1
VF
2
3
4
A/ s
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
1.4
1.2
1.0
60
1200
µs
T
VJ=100°C
ns
V
0.9
VR=540V
1000
50
VFR
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
IF=30A
IRM
40
30
20
10
0
800
600
Kf
trr
max.
tfr
IF=60A
IF=30A
IF=15A
VFR
0.8
0.6
QR
400
200
0.4
tfr
typ.
0.2
0.0
TVJ=125°C
IF=30A
0
A/ s
A/ s
600
0
40
80
120
160
0
200
-diF/dt
400
600
0
200
400
°C
TVJ
-diF/dt
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
Dimensions
A
B
12.70 14.73 0.500 0.580
14.23 16.51 0.560 0.650
C
D
9.66 10.66 0.380 0.420
3.54 4.08 0.139 0.161
E
F
5.85 6.85 0.230 0.420
2.54 3.42 0.100 0.135
G
H
1.15 1.77 0.045 0.070
-
6.35
-
0.250
J
K
0.64 0.89 0.025 0.035
4.83 5.33 0.190 0.210
L
M
3.56 4.82 0.140 0.190
0.38 0.56 0.015 0.022
N
Q
2.04 2.49 0.080 0.115
0.64 1.39 0.025 0.055
Fig. 7 Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
2 - 2
相关型号：
DSEI20-12A
Rectifier Diode, 1 Phase, 1 Element, 17A, 1200V V(RRM), Silicon, TO-220AC, TO-220AC, 2 PIN
LITTELFUSE
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