DSEI20-12A [IXYS]
Fast Recovery Epitaxial Diode; 快速恢复外延二极管
| 型号： | DSEI20-12A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Fast Recovery Epitaxial Diode |
| 文件： | 总2页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEI 20-12A
IFAVM
VRRM = 1200 V
trr = 40 ns
=
17 A
Fast Recovery Epitaxial Diode
(FRED)
C
A
VRSM
VRRM
Type
1200V 1200V DSEI 20-12A
TO-220 AC
Symbol
IFRMS
TestConditions
Maximum Ratings
TVJ = TVJM
70
17
A
A
A
C
IFAVM
IFRM
①
TC = 85°C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
220
C
A
IFSM
TVJ
TVJ = 150°C
TVJ 45°C
TVJ = 150°C
=
45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
130
140
A
A
A = Anode
C = Cathode
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
110
120
A
A
A2s
A2s
A2s
A2s
∫i2dt
=
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
85
80
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
60
60
Features
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
●
Low IRM-values
●
●
●
●
●
●
Planar passivated chips
Very short recovery time
Soft recovery behaviour
Epoxy meet UL 94V-0.
Extremely low switching losses
International standard package
JEDEC TO-220 AC
Ptot
Md
TC = 25°C
78
W
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
Weight
2
g
Applications
●
Snubber diode
Anti saturation diode
Inductive heating and melting
Free wheeling diode in converters
●
Symbol
IR
TestConditions
Characteristic Values
●
Typ.
Max.
●
VR = VRRM
VR = 0.8 VRRM
VR = 0.8 VRRM
TVJ
TVJ
=
=
25°C
25°C
750
250
7
µA
µA
mA
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Antiparallel diode for high frequency
switching devices
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
●
TVJ = 125°C
●
VF
IF = 12 A
TVJ = 150°C
TVJ
1.87
2.15
V
V
= 25°C
●
●
VT0
rT
For power-loss calculations only
TVJ = TVJM
1.65
V
18.2 mΩ
Advantages
RthJC
RthCK
RthJA
1.6 K/W
K/W
60 K/W
●
Low losses
Low noise switching
High reliability circuit operation
Low voltage peaks for reduced
0.5
●
●
●
trr
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C
VR = 540 V; IF = 20 A; -diF/dt = 100 A/µs
40
7
60
ns
A
protection circuits
Operating at lower temperature or
IRM
●
L
≤ 0.05 µH
TVJ = 100°C
space saving by reduced cooling
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to DIN/IEC 747
96501 (7/96)
©1996 IXYS Corporation. All rights reserved.
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-5030 Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara, CA 95054
Phone: (408) 982-0700 Fax: 408-496-0670
DSEI 20-12A
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus
-diF/dt.
Dim. Millimeter
Inches
Max.
Min. Max. Min.
A
B
31.5 31.7 1.241 1.249
7.8 8.2 0.307 0.323
C
D
4.0
-
0.158
-
4.1 4.3 0.162 0.169
E
F
4.1 4.3 0.162 0.169
14.9 15.1 0.587 0.595
G
H
30.1 30.3 1.186 1.193
38.0 38.2 1.497 1.505
J
K
11.8 12.2 0.465 0.481
8.9 9.1 0.351 0.359
Dimensions
miniBLOC SOT-227 B
M4 screws (4x) supplied
L
M
0.75 0.85 0.030 0.033
12.6 12.8 0.496 0.504
N
O
25.2 25.4 0.993 1.001
1.95 2.05 0.077 0.081
P
-
5.0
-
0.197
Fig. 7 Transient thermal impedance junction to case.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
IXYS Semiconductor GmbH
3540 Bassett Street, Santa Clara, CA 95054
Phone: (408) 982-0700 Fax: 408-496-0670
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-5030 Fax: +49-6206-503627
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