DSEI2X121-02P [LITTELFUSE]

Rectifier Diode, 1 Phase, 2 Element, 123A, 200V V(RRM), Silicon, ECOPAC-12;
DSEI2X121-02P
型号: DSEI2X121-02P
厂家: LITTELFUSE    LITTELFUSE
描述:

Rectifier Diode, 1 Phase, 2 Element, 123A, 200V V(RRM), Silicon, ECOPAC-12

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DSEI 2x121 IFAVM = 2x123 A  
VRRM = 200 V  
Fast Recovery  
Epitaxial Diode (FRED)  
trr  
= 35 ns  
AC-1  
IK-10  
VRSM  
V
VRRM  
V
Type  
200  
200  
DSEI 2x 121-02P  
LN-9  
VX-18  
D5  
Symbol  
IFRMS  
Conditions  
Maximum Ratings (per diode)  
Features  
• 2 independent FRED in 1 package  
• Isolation voltage 3000 V~  
• Planar passivated chips  
• Leads suitable for PC board soldering  
• Very short recovery time  
TVJ = TVJM  
150  
123  
600  
A
A
A
IFAVM  
IFRM  
TC = 70°C; rectangular; d = 0.5  
tP < 10 µs; rep. rating; pulse width limited by TVJM  
IFSM  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
1200  
A
• Soft recovery behaviour  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
Applications  
• Antiparallel diode for high frequency  
switching devices  
Ptot  
TC = 25°C  
250  
W
• Anti saturation diode  
• Snubber diode  
VISOL  
50/60 Hz, RMS  
IISOL 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
• Free wheeling diode in converters  
and motor control circuits  
• Rectifiers in switch mode power  
supplies (SMPS)  
• Inductive heating and melting  
• Uninterruptible power supplies (UPS)  
• Ultrasonic cleaners and welders  
Md  
Mounting torque (M4)  
1.5 - 2.0  
14 - 18  
Nm  
lb.in.  
Weight  
Symbol  
20  
g
Conditions  
Characteristic Values (per diode)  
typ.  
max.  
Advantages  
IR  
TVJ = 25°C VR = VRRM  
1
0.5  
20  
mA  
mA  
mA  
T
VJ = 25°C VR = 0.8 • VRRM  
• Easy to mount with two screws  
• Space and weight savings  
• Improved temperature and power  
cycling capability  
TVJ = 125°C VR = 0.8 • VRRM  
VF  
IF = 120 A; TVJ = 150°C  
TVJ = 25°C  
0.89  
0.95  
1.10  
V
V
• Low noise switching  
• Small and light weight  
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
0.7  
2.1  
V
mΩ  
RthJC  
RthCK  
0.7  
50  
15  
K/W  
K/W  
0.1  
35  
trr  
IF = 1 A; -di/dt = 400 A/µs  
VR = 30 V; TVJ = 25°C  
ns  
IRM  
VR = 100 V; IF = 100 A; -diF/dt = 200 A/µs  
12  
A
L 0.05 µH; TVJ = 100°C  
dS  
dA  
a
Creeping distance on surface  
Creeping distance in air  
Allowable acceleration  
min. 11.2  
min. 11.2  
max. 50  
mm  
mm  
m/s²  
Recommended replacement:  
DSEI 2x161-02P/DSEI 2x121-02A  
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions  
20070731a  
© 2007 IXYS All rights reserved  
1 - 2  
DSEI 2x 121-02P  
200  
A
175  
2.0  
60  
A
TVJ= 100°C  
VR = 100V  
TVJ= 100°C  
VR = 100V  
μC  
50  
40  
30  
20  
10  
0
IRM  
Q
150  
125  
100  
75  
r 1.5  
IF  
IF=240A  
IF=120A  
IF= 60A  
IF=240A  
IF=120A  
IF= 60A  
1.0  
0.5  
0.0  
TVJ=150°C  
TVJ=100°C  
50  
TVJ=25°C  
25  
0
0.0  
D5  
V
A/μs  
-diF/dt  
0.5  
1.0  
VF  
1.5  
10  
100  
1000  
0
200 400 600 1000  
A/μs  
-diF/dt  
Fig. 1 Forward current IF versus VF  
2.0  
Fig. 2 Typ. reverse recovery charge Qr  
versus -diF/dt  
Fig. 3 Typ. peak reverse current IRM  
versus -diF/dt  
150  
12  
V
3.0  
TVJ=100°C  
TVJ= 100°C  
IF = 120A  
VR = 100V  
ns  
μs  
10  
VFR  
2.5  
VFR  
trr  
1.5  
125  
tfr  
Qr  
IF=240A  
IF=120A  
IF= 60A  
Kf  
8
6
4
2
0
2.0  
1.5  
1.0  
0.5  
0.
tfr  
IRM  
1.0  
100  
75  
0.5  
0.0  
50  
0
50  
100  
TVJ  
150  
0
200 400 600 800  
-diF/dt  
0
100 200 300 400 500 A/μs  
°C  
A/μs  
diF/dt  
Fig. 4 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 5 Typ. recovery time trr  
versus -diF/dt  
Fig. 6 Typ. peak forward voltage  
VFR and tfr versus diF/dt  
1
Dimensions in mm (1mm = 0.0394“)  
K/W  
D=0.5  
0.2  
0.1  
0.1  
ZthJC  
0.05  
0.02  
0.01  
0.01  
Single Pulse  
0.001  
0.001  
0.01  
0.1  
1
10  
s
t
Fig. 7 Transient thermal impedance junction to case at various duty cycles  
20070731a  
© 2007 IXYS All rights reserved  
2 - 2  

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