DSEI2X121 [IXYS]
Fast Recovery Epitaxial Diode (FRED); 快速恢复外延二极管（ FRED ）
| 型号： | DSEI2X121 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Fast Recovery Epitaxial Diode (FRED) |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEI 2x 121 IFAVM = 2x 123 A
VRRM = 200 V
Fast Recovery
Epitaxial Diode (FRED)
trr
= 35 ns
miniBLOC, SOT-227 B
E72873
VRSM
V
VRRM
V
Type
200
200
DSEI 2x 121-02A
Symbol
IFRMS
Test Conditions
Maximum Ratings (per diode)
Features
①
International standard package
TVJ = TVJM
150
123
600
A
A
A
IFAVM
IFRM
①
TC = 70°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
miniBLOC (ISOTOP compatible)
①
①
①
①
①
①
①
Isolation voltage 2500 V~
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
IFSM
TVJ = 45°C; t = 10 ms (50 Hz), sine
1200
1300
A
A
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
1080
1170
A
A
t = 8.3 ms (60 Hz), sine
I2t
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
7200
7100
A2s
A2s
Soft recovery behaviour
TVJ = 150°C; t = 10 ms (50 Hz), sine
5800
5700
A2s
A2s
miniBLOC, SOT-227 B
t = 8.3 ms (60 Hz), sine
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
Ptot
TC = 25°C
250
W
VISOL
50/60 Hz, RMS
2500
V~
IISOL £ 1 mA
Md
Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
Symbol
30
g
M4 screws (4x) supplied
Test Conditions
Characteristic Values (per diode)
Dim.
Millimeter
Inches
Min.
typ.
max.
Min.
Max.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C VR = 0.8 • VRRM
VR = VRRM
VR = 0.8 • VRRM
1
0.5
20
mA
mA
mA
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
VF
IF = 120 A;
TVJ = 150°C
TVJ = 25°C
0.89
0.95
1.10
V
V
G
H
30.12
37.80
30.30
38.20
1.186
1.489
1.193
1.505
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.7
2.1
V
mW
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
RthJC
RthCK
0.5
K/W
K/W
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
0.1
35
12
trr
IF = 1 A; -di/dt = 400 A/ms; VR = 30 V; TVJ = 25°C
50
15
ns
A
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
IRM
VR = 100 V; IF = 100 A; -diF/dt = 200 A/ms
L £ 0.05 mH; TVJ = 100°C
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
V
W
3.30
0.780
4.57
0.830
0.130
19.81
0.180
21.08
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 2
DSEI 2x 121, 200V
200
A
175
2.0
µC
60
A
TVJ= 100°C
VR = 100V
TVJ= 100°C
VR = 100V
50
40
30
20
10
0
IRM
Q
150
125
100
75
r 1.5
IF
IF=240A
IF=120A
IF= 60A
IF=240A
IF=120A
IF= 60A
1.0
0.5
0.0
TVJ=150°C
TVJ=100°C
50
TVJ=25°C
25
0
0.0
V
A/ s
-diF/dt
0.5
1.0
VF
1.5
10
100
1000
0
200 400 600 1000
A/ s
-diF/dt
Fig. 1 Forward current IF versus VF
Fig. 2 Typ. reverse recovery charge Qr
versus -diF/dt
Fig. 3 Typ. peak reverse current IRM
versus -diF/dt
2.0
150
12
V
3.0
TVJ=100°C
VR = 100V
TVJ= 100°C
IF = 120A
ns
µs
10
VFR
2.5
VFR
trr
1.5
125
tfr
Qr
IF=240A
IF=120A
IF= 60A
Kf
8
6
4
2
0
2.0
1.5
1.0
0.5
0.
tfr
IRM
1.0
100
75
0.5
0.0
50
0
50
100
TVJ
150
0
200 400 600 800
0
100 200 300 400 500 A/ s
°C
A/ s
-diF/dt
diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Typ. recovery time trr
versus -diF/dt
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF/dt
1
Constants for ZthJC calculation:
K/W
D=0.5
i
Rthi (K/W)
ti (s)
1
2
3
0.0725
0.1423
0.2852
0.028
0.092
0.35
0.2
0.1
ZthJC
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.001
0.01
0.1
1
10
s
t
Fig. 7 Transient thermal impedance junction to case at various duty cycles
© 2000 IXYS All rights reserved
2 - 2
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