DSEI2X101 [IXYS]
Fast Recovery Epitaxial Diode (FRED); 快速恢复外延二极管（ FRED ）
| 型号： | DSEI2X101 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Fast Recovery Epitaxial Diode (FRED) |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEI 2x101 IFAVM = 2x91 A
VRRM = 1200 V
Fast Recovery
Epitaxial Diode (FRED)
trr
= 40 ns
AC-1
IK-10
VRSM
V
VRRM
V
Type
1200
1200
DSEI 2x 101-12P
LN-9
VX-18
D5
Symbol
IFRMS
Conditions
Maximum Ratings (per diode)
Features
• 2 independent FRED in 1 package
• Isolation voltage 3000 V~
• Planar passivated chips
• Leads suitable for PC board soldering
• Very short recovery time
TVJ = TVJM
130
91
tbd
A
A
A
IFAVM
IFRM
①
TC = 50°C; rectangular; d = 0.5
tP < 10 µs; rep. rating; pulse width limited by TVJM
IFSM
TVJ = 45°C; t = 10 ms (50 Hz), sine
900
A
• Soft recovery behaviour
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
Applications
• Antiparallel diode for high frequency
switching devices
Ptot
TC = 25°C
250
W
• Anti saturation diode
• Snubber diode
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Md
Mounting torque (M4)
1.5 - 2.0
14 - 18
Nm
lb.in.
Weight
Symbol
24
g
Conditions
Characteristic Values (per diode)
typ.
max.
Advantages
IR
TVJ = 25°C VR = VRRM
TVJ = 25°C VR = 0.8 • VRRM
TVJ = 125°C VR = 0.8 • VRRM
3.0
1.5
15
mA
mA
mA
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
VF
IF = 100 A; TVJ = 150°C
TVJ = 25°C
1.61
1.87
V
V
• Low noise switching
• Small and light weight
VT0
rT
For power-loss calculations only
TVJ = TVJM
1.01
6.1
V
mΩ
RthJC
RthCK
0.5
60
30
K/W
K/W
0.05
trr
IF = 1 A; -di/dt = 400 A/µs
VR = 30 V; TVJ = 25°C
40
ns
IRM
VR = 100 V; IF = 75 A; -diF/dt = 200 A/µs
24
A
L ≤ 0.05 µH; TVJ = 100°C
dS
dA
a
Creeping distance on surface
Creeping distance in air
Allowable acceleration
min. 11.2
min. 11.2
max. 50
mm
mm
m/s²
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2001 IXYS All rights reserved
1 - 2
DSEI 2x 101-12P
16
µC
14
140
A
150
A
TVJ= 100°C
VR = 600V
TVJ= 100°C
VR =600V
120
IRM
125
F 100
75
Qr
12
10
8
I
100
80
60
40
20
0
IF=200A
IF=100A
IF= 50A
TVJ=150°C
TVJ=100°C
TVJ= 25°C
IF=200A
IF=100A
IF= 50A
6
50
4
25
2
0
100
0
0.0
D5
V
A/µs
-diF/dt
1000
0
200 400 600 1000
0.5
1.0
1.5
VF
2.0
A/µs
-diF/dt
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
1.4
1.2
500
60
1.5
TVJ= 100°C
VR = 600V
TVJ= 100°C
IF = 100A
V
ns
µs
450
400
50
VFR
trr
tfr
Kf
40
30
20
10
0
1.0
0.5
0.
1.0
tfr
VFR
350
IRM
IF=200A
IF=100A
IF= 50A
0.8
300
250
200
Qr
0.6
0.4
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 800 1A/µs
°C
A/µs
-diF/dt
diF/dt
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
1
Dimensions in mm (1mm = 0.0394“)
K/W
D=0.7
0.5
ZthJC
0.3
0.2
0.1
0.1
0.05
Single Pulse
DSEI 2x101-12
0.05
0.001
0.01
0.1
1
10
s
t
Fig. 7 Transient thermal impedance junction to case at various duty cycles
© 2001 IXYS All rights reserved
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