TIP36F [ISC]

isc Silicon PNP Power Transistor; ISC的硅PNP功率晶体管
TIP36F
型号: TIP36F
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

isc Silicon PNP Power Transistor
ISC的硅PNP功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
TIP36F  
DESCRIPTION  
·DC Current Gain-  
: hFE= 25(Min)@IC = -1.5A  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= -160V(Min)  
·Complement to Type TIP35F  
·Current Gain-Bandwidth Product-  
: fT= 3.0MHz(Min)@IC= -1.0A  
APPLICATIONS  
·Designed for use in general purpose power amplifier and  
switching applications.  
ABSOLUTE MAXIMUM RATINGS (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
VALUE  
-200  
-160  
-5  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Collector Current -Continuous  
Collector Current-peak  
Base Current  
-25  
A
ICM  
-40  
A
IB  
-5  
A
PC  
Collector Power Dissipation@ TC=25  
Junction Temperature  
125  
W
150  
Tj  
Storage Temperature  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.0  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
TIP36F  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
MAX  
UNIT  
V
VCEO(SUS)  
Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0  
-160  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Base-Emitter On Voltage  
Collector Cutoff Current  
Collector Cutoff Current  
Emitter Cutoff Current  
IC= -15A; IB= -3A  
-2.5  
-5.0  
-2.0  
-4.0  
-1.0  
-0.7  
-1.0  
V
VCE  
VCE  
VBE  
VBE  
(sat)-1  
(sat)-2  
(on)-1  
(on)-2  
IC= -25A; IB= -6.25A  
IC= -15A ; VCE= -4V  
IC= -25A ; VCE= -4V  
VCE= -90V; IB= 0  
V
V
V
ICEO  
mA  
mA  
mA  
ICES  
IEBO  
hFE-1  
hFE-2  
fT  
VCE= -200V; VBE= 0  
VEB= -5V; IC= 0  
DC Current Gain  
IC= -1.5A ; VCE= -4V  
IC= -15A ; VCE= -4V  
IC= -1A ; VCE= -10V; ftest= 1.0MHz  
25  
8
DC Current Gain  
Current-Gain—Bandwidth Product  
3
MHz  
Switching Times  
Turn-On Time  
1.2  
0.9  
μs  
μs  
ton  
IC= -15A; IB1= -IB2= -1.5A;  
VBE( )= -4.15V; RL= 2Ω  
off  
Turn-Off Time  
toff  
isc Websitewww.iscsemi.cn  

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