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BUL1203E [ISC]

Silicon NPN Power Transistor; 硅NPN功率晶体管
BUL1203E
型号： BUL1203E
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon NPN Power Transistor
硅NPN功率晶体管

晶体 晶体管
文件： 总2页 (文件大小：255K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BUL1203E  
DESCRIPTION  
·High Voltage  
·High Speed Switching  
APPLICATIONS  
·Electronic ballasts for fluorescent lighting  
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)  
SYMBOL  
VCBO  
VCES  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage VBE= 0  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
1200  
1200  
V
550  
V
9
V
Collector Curren-Continuous  
Collector Current-Peak  
Base Current  
5
A
ICM  
8
2
A
IB  
A
IBM  
Base Current-Peak  
4
A
Collector Power Dissipation  
@TC=25℃  
PC  
100  
150  
-65~150  
W
℃
℃
Tj  
Junction Temperature  
Tstg  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.25  
℃/W  
Rth j-c  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BUL1203E  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(  
PARAMETER  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
CONDITIONS  
IC= 0.1A; IB= 0, L= 25mH  
IC= 1A; IB= 0.2A  
MIN  
TYP. MAX UNIT  
550  
V
0.5  
0.7  
1.5  
1.5  
1.5  
0.1  
0.1  
V
V
)-1  
)-2  
)-3  
)-1  
)-2  
sat  
sat  
sat  
sat  
sat  
IC= 2A; IB= 0.4A  
VCE(  
VCE(  
VBE(  
VBE(  
IC= 3A; IB= 1A  
V
IC= 2A; IB= 0.4A  
V
IC= 3A; IB= 1A  
V
ICES  
VCE= 1200V; VBE= 0  
VCE= 550V; IB= 0  
C= 1mA; VCE= 5V  
IC= 10mA; VCE= 5V  
IC= 0.8A; VCE= 3V  
IC= 2A; VCE= 5V  
mA  
mA  
ICEO  
Collector Cutoff Current  
hFE-1  
hFE-2  
hFE-3  
hFE-4  
DC Current Gain  
10  
10  
14  
9
DC Current Gain  
DC Current Gain  
32  
28  
DC Current Gain  
Switching Times ;Resistive Load  
Turn-on Time  
Storage Time  
Fall Time  
0.5  
3.0  
0.3  
μs  
μs  
μs  
ton  
IC= 2A; IB1= 0.4A; IB2= -0.8A;  
tp= 30μs; VCC= 150V  
ts  
tf  
isc Website：www.iscsemi.cn  

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