BUL1203EFP [STMICROELECTRONICS]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管
| 型号： | BUL1203EFP |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 文件： | 总7页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUL1203EFP
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■
■
VERY HIGH SWITCHING SPEED
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
3
APPLICATIONS
2
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
1
TO-220FP
DESCRIPTION
The BUL1203EFP is a new device manufactured
using Diffused Collector technology to enhance
switching speeds and tight hFE range while
maintaining a wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCES
VCEO
VEBO
IC
Parameter
Collector-BaseVoltage (IE = 0)
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
1200
1200
550
9
Unit
V
V
V
V
A
A
A
A
W
V
5
ICM
Collector Peak Current (tp < 5 ms)
Base Current
8
IB
2
IBM
Base Peak Current (tp < 5 ms)
4
o
Ptot
Total Dissipation at Tc = 25 C
36
Visol
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
1500
Tstg
Tj
-65 to 150
150
oC
oC
Max. Operating Junction Temperature
1/7
November 2003
BUL1203EFP
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
3.47
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 1200 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
100
µA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 550 V
IC = 100 mA
100
µA
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
L = 25 mH
550
9
V
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 10 mA
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IC = 3 A
IB = 0.2 A
IB = 0.4 A
IB = 1 A
0.5
0.7
1.5
V
V
V
VBE(sat)
hFE
Base-Emitter
Saturation Voltage
IC = 2 A
IC = 3 A
IB = 0.4 A
IB = 1 A
1.5
1.5
V
V
DC Current Gain
IC = 1 mA
IC = 10 mA
IC = 0.8 A
IC = 2 A
VCE = 5 V
VCE = 5 V
VCE = 3 V
VCE = 5 V
10
10
14
9
32
28
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
IC = 2 A
IB2 = -0.8 A
VCC = 150 V
IB1 = 0.4 A
tp = 30 µs
(see figure 2)
ton
ts
tf
0.5
3.0
0.3
µs
µs
µs
2.5
0.2
Ear
Repetitive Avalanche
Energy
L = 2 mH
VCC = 50 V
(see figure 3)
C = 1.8 nF
VBE = -5 V
6
mJ
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Derating Curve
2/7
BUL1203EFP
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Inductive Load Storage Time
Inductive Load Fall Time
3/7
BUL1203EFP
Reverse Biased Safe Operating Area
Figure 1: Inductive Load Switching Test Circuit
Figure 2: Resistive Load Switching Test Circuit
4/7
BUL1203EFP
Figure 3: Energy Rating Test Circuit
5/7
BUL1203EFP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
6/7
BUL1203EFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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