BUL128 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | BUL128 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUL128
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Low Collector Saturation Voltage
: VCE(sat) = 0.7V(Max) @ IC= 0.5A
·Very High Switching Speed
APPLICATIONS
·Designed for use in lighting applications and low cost switch-
mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
IC
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
700
400
V
9
V
Collector Current-Continuous
Collector Current-peak tp<5ms
Base Current-Continuous
Base Current-peak tp<5ms
4
A
ICM
8
A
IB
2
4
A
IBM
A
Collector Power Dissipation
TC=25℃
PC
70
W
℃
℃
Junction Temperature
150
Ti
Storage Temperature Range
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
1.78
62.5
UNIT
℃/W
℃/W
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Rth j-c
Rth j-A
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUL128
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH
V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0
PARAMETER
CONDITIONS
MIN
400
9
TYP.
MAX
UNIT
V
V
Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
Collector-Emitter Saturation Voltage IC= 4A; IB= 1A
0.7
1.0
1.5
V
VCE
VCE
VCE
VCE
VBE
VBE
VBE
(sat)-1
(sat)-2
(sat)-3
(sat)-4
(sat)-1
(sat)-2
(sat)-3
V
V
0.5
V
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutof Current
DC Current Gain
IC= 0.5A; IB= 0.1A
IC= 1A; IB= 0.2A
IC= 2.5A; IB= 0.A
1.1
1.2
1.3
V
V
V
VCE= 700V; VBE= -1.5V
VCE= 700V; VBE= -1.5V,TC= 125℃
0.1
0.5
ICES
mA
mA
ICEO
hFE-1
hFE-2
VCE= 400V; IB= 0
IC= 10mA; VCE= 5V
IC= 2A; VCE= 5V
0.25
40
10
14
DC Current Gain
Switching Times, Resistive Load
Storage Time
Fall Time
3.0
0.4
μs
μs
ts
tf
IC= 2A; VCC= 125V;
IB1= -IB2= 0.4A; tp= 30μs
hFE-2 Classifications
A
B
14-28
25-40
isc Website：www.iscsemi.cn
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