BUL128 [SUNTAC]
High Voltage Fast-Switching NPN Power Transistor; 高压快速开关NPN功率晶体管
| 型号： | BUL128 |
| 厂家： | 
SUNTAC ELECTRONIC CORP. |
| 描述： | High Voltage Fast-Switching NPN Power Transistor |
| 文件： | 总5页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage Fast-Switching
NPN Power Transistor
BUL128
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NPN TRANSISTOR
INTERNAL SCHEMATIC DIAGR
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■
■
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HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
VERY HIGH SWITCHING SPEED
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
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APPLICATIONS:
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ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
4
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
1
4. COLLECTOR
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
V
700
400
V
9
V
4
A
ICM
Collector Peak Current (tp < 5 ms)
Base Current
8
A
IB
2
A
IBM
Base Peak Current (tp < 5 ms)
4
70
A
o
Ptot
Total Dissipation at Tc = 25 C
W
oC
oC
Tstg
Tj
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
1/5
BUL128
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
1.78
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 700 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = -1.5 V) VCE = 700 V
100
500
µA
µA
o
Tj = 125 C
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 10 mA
9
V
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
L = 25 mH
400
V
ICEO
Collector Cut-Off
Current (IB = 0)
VCE = 400 V
250
µA
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IC = 2.5 A
IC = 4 A
IB = 0.1 A
IB = 0.2 A
IB = 0.5 A
IB = 1 A
0.7
1
1.5
V
V
V
V
0.5
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IC = 2.5 A
IB = 0.1 A
IB = 0.2 A
IB = 0.5 A
1.1
1.2
1.3
V
V
V
hFE
DC Current Gain
IC = 10 mA
IC = 2 A
VCE = 5 V
VCE = 5 V
10
Group A
Group B
14
25
28
40
RESISTIVE LOAD
Storage Time
Fall Time
VCC = 125 V
IB1 = 0.4 A
Tp = 30 µs
IC = 2 A
IB2 = -0.4 A
(see fig.2)
ts
tf
1.5
3
0.4
µs
µs
0.2
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
VBE(off) = -5 V
Vclamp = 200 V
IB1 = 0.4 A
RBB = 0 Ω
(see fig.1)
ts
tf
0.6
0.1
1
0.2
µs
µs
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/5
BUL128
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/5
BUL128
Inductive Load Fall Time
Resistive Load Fall Time
Reverse Biased SOA
Inductive Load Storage Time
Resistive Load Storage Time
4/5
BUL128
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/5
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