BDX63C [ISC]
isc Silicon NPN Darlington Power Transistor; ISC的硅NPN达林顿功率晶体管
| 型号： | BDX63C |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Darlington Power Transistor |
| 文件： | 总2页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX63/A/B/C
DESCRIPTION
·Collector Current -IC= 8A
·High DC Current Gain-hFE= 1000(Min)@ IC= 3A
·Complement to Type BDX62/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
80
UNIT
BDX63
BDX63A
BDX63B
BDX63C
BDX63
100
120
140
60
Collector-Base
Voltage
VCBO
V
BDX63A
BDX63B
BDX63C
80
Collector-Emitter
Voltage
VCEO
V
100
120
5
VEBO
IC
ICM
IB
Emitter-Base Voltage
V
A
Collector Current-Continuous
Collector Current-Peak
8
12
A
Base Current-Continuous
0.15
90
A
Collector Power Dissipation
PC
TJ
W
℃
℃
@ TC=25℃
Junction Temperature
200
-65~200
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
1.94
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX63/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
60
TYP. MAX UNIT
BDX63
BDX63A
BDX63B
BDX63C
80
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
IC= 100mA ;IB=0
V
100
120
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
C-E Diode Forward Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
IC= 3A; IB= 12mA
IC= 3A ; VCE= 3V
IF= 3A
2
V
V
2.5
VBE(
)
on
VECF
1.2
V
ICEO
ICBO
IEBO
hFE-1
hFE-2
hFE-3
COB
VCE= 1/2VCEOmax; IB= 0
0.2
mA
mA
mA
V
CB= VCEOmax;IE= 0
0.2
2
VCB= 1/2VCBOmax;IE= 0;TJ= 200℃
VEB= 5V; IC=0
5
IC= 0.5A ; VCE= 3V
IC= 3A ; VCE= 3V
2500
DC Current Gain
1000
DC Current Gain
IC= 8A ; VCE= 3V
2600
100
Output Capacitance
pF
IE= 0 ; VCB= 10V; ftest= 1MHz
Switching times
Turn-on Time
Turn-off Time
0.5
5
μs
μs
ton
toff
IC= 3A; IB1= -IB2= 12mA
2
isc Website：www.iscsemi.cn
相关型号：
©2020 ICPDF网 联系我们和版权申明