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2SD1608 [ISC]

Silicon NPN Darlington Power Transistor; 硅NPN达林顿功率晶体管
2SD1608
型号： 2SD1608
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon NPN Darlington Power Transistor
硅NPN达林顿功率晶体管

晶体 晶体管
文件： 总2页 (文件大小：222K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
2SD1608  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= 120V(Min)  
·High DC Current Gain  
: hFE= 1000(Min) @IC= 4A  
·High Speed Switching  
APPLICATIONS  
·Designed for medium speed power switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
120  
V
V
V
A
A
120  
7
Collector Current-Continuous  
Collector Current-Peak  
8
12  
ICP  
Collector Power Dissipation  
@ Ta=25℃  
2
PC  
W
Collector Power Dissipation  
@ TC=25℃  
50  
TJ  
Junction Temperature  
150  
-55~150  
℃
℃
Storage Temperature Range  
Tstg  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
2SD1608  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
IC= 2A; L= 10mH  
120  
IC= 4A; IB= 8mA  
IC= 8A; IB= 80mA  
IC= 4A; IB= 8mA  
IC= 8A; IB= 80mA  
VCB= 120V; IE= 0  
VCE= 100V; IB= 0  
IC= 4A; VCE= 3V  
1.5  
3.0  
V
)-1  
)-2  
)-1  
)-2  
sat  
sat  
sat  
sat  
V
VCE(  
VBE(  
VBE(  
2.0  
V
3.5  
V
ICBO  
ICEO  
hFE  
100  
10  
μA  
μA  
Collector Cutoff Current  
DC Current Gain  
1000  
20000  
Switching times  
Turn-on Time  
0.7  
6.0  
2.0  
μs  
μs  
μs  
ton  
tstg  
tf  
IC= 4A, IB1= -IB2= 8mA  
Storage Time  
Fall Time  
2
isc Website：www.iscsemi.cn  

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