2SD1611 [PANASONIC]
Silicon NPN triple diffusion planar type Darlington(For power amplification); 硅NPN三重扩散平面型达林顿（对于功率放大）
| 型号： | 2SD1611 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1611
Silicon NPN triple diffusion planar type Darlington
Unit: mm
3.4±0.3
8.5±0.2
6.0±0.5
For power amplification
1.0±0.1
Features
High foward current transfer ratio hFE
High collector to base voltage VCBO
■
1.5max.
1.1max.
0.5max.
●
●
0.8±0.1
●
N type package enabling direct soldering of the radiating fin to
2.54±0.3
the printed circuit board, etc. of small electronic equipment.
5.08±0.5
1:Base
2:Collector
3:Emitter
1
2
3
N Type Package
Absolute Maximum Ratings (T =25˚C)
■
C
Unit: mm
3.4±0.3
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
8.5±0.2
6.0±0.3
1.0±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
500
400
V
5
V
10
A
IC
6
40
A
R0.5
R0.5
0.8±0.1
Collector power TC=25°C
0 to 0.4
2.54±0.3
1.1 max.
PC
W
5.08±0.5
dissipation
Ta=25°C
1.3
Junction temperature
Storage temperature
Tj
150
˚C
˚C
1:Base
2:Collector
3:Emitter
1
2
3
Tstg
–55 to +150
N Type Package (DS)
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
µA
V
Collector cutoff current
VCB = 350V, IE = 0
100
Collector to emitter voltage
Emitter to base voltage
VCEO(sus)
VEBO
hFE
IC = 2A, L = 10mH
IE = 0.1A, IC = 0
400
5
V
Forward current transfer ratio
VCE = 2V, IC = 2A
IC = 3A, IB = 0.06A
500
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
1.5
2.5
V
V
I
C = 3A, IB = 0.06A
Transition frequency
fT
VCE = 10V, IC = 1A, f = 1MHz
15
MHz
C
E
Internal Connection
B
1
Power Transistors
2SD1611
PC — Ta
IC — VCE
VCE(sat) — IC
80
5
4
3
2
1
0
100
IC/IB=50
TC=25˚C
(1) TC=Ta
70
30
10
(2) With a 100 × 100 × 2mm
IB=8mA
Al heat sink
(3) Without heat sink
(PC=1.3W)
60
50
40
30
20
10
0
3
1
25˚C
4.0mA
3.5mA
3.0mA
TC=100˚C
(1)
–25˚C
2.5mA
2.0mA
0.3
0.1
1.5mA
0.03
0.01
(3)
(2)
0
20 40 60 80 100 120 140 160
0
1
2
3
4
5
6
0.01 0.03
0.1
0.3
1
3
10
(
)
( )
V
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VBE(sat) — IC
hFE — IC
Cob — VCB
100
105
104
103
102
10
IC/IB=50
VCE=2V
IE=0
f=1MHz
TC=25˚C
30
10
104
103
102
10
3
1
TC=–25˚C
100˚C
25˚C
0.3
0.1
TC=100˚C
25˚C
0.03
0.01
–25˚C
1
0.1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.3
1
3
10
30
100
( )
A
( )
A
( )
Collector to base voltage VCB V
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
100
103
102
10
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
Non repetitive pulse
TC=25˚C
30
10
(1)
(2)
ICP
IC
t=10µs
1ms
3
1
300ms
1
0.3
0.1
10–1
10–2
0.03
0.01
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
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