2SD1614-K [KEXIN]
NPN Transistors;
| 型号： | 2SD1614-K |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总3页 (文件大小：754K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1614
1.70 0.1
■ Features
● High DC Current Gain:hFE 135 to 600.
● Low VCE(sat)
● Complementary to 2SB1114
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
40
20
6
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
I
C
2
A
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
(Note.1)
I
CP
3
P
C
2
W
℃
T
J
150
Storage Temperature Range
T
stg
-55 to 150
Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
40
20
6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 uA， I
E= 0
Ic= 1 mA，I = 0
B
I
E
= 100 uA， I
C= 0
I
CBO
EBO
V
V
CB= 40 V , I
EB= 6V , I
E
= 0
0.1
0.1
0.5
1.2
uA
V
I
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=2 A, I
B
=50 mA
=50 mA
0.3
V
C
=2 A, I
B
0.95
V
BE
V
V
V
V
V
CE= 6V, I
CE= 2V, I
CE= 2V, I
C= 100 mA
C= 100 mA
C= 2 A
0.65 0.68 0.75
135
40
350
600
DC current gain
hFE
Collector output capacitance
Transition frequency
C
ob
T
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
= -50mA
28
pF
f
E
200
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD1614-M
135-270
XM
2SD1614-L
200-400
XL
2SD1614-K
300-600
XK
1
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1614
■ Typical Characterisitics
2
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1614
■ Typical Characterisitics
3
www.kexin.com.cn
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