2SD1611 [KEXIN]
Silicon NPN Triple Diffusion Planar Type Darlington; 硅NPN三重扩散平面型达林顿
| 型号： | 2SD1611 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon NPN Triple Diffusion Planar Type Darlington |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type Darlington
2SD1611
TO-252
Unit: mm
6.50+0.15
-0.15
2.30+0.1
-0.1
5.30+0.2
0.50+0.8
-0.7
-0.2
Features
High forward current transfer ratio hFE
High collector-base voltage (Emitter open) VCBO
0.127
max
0.80+0.1
-0.1
0.60+0.1
2.3
4.60+0.15
-0.1
1 Base
-0.15
2 Collector
3 Emitter
Internal Connection
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
500
400
5
Unit
V
V
V
6
A
Peak collector current
ICP
10
A
Collector power dissipation
Ta = 25
40
A
PC
Tj
1.3
150
W
Junction temperature
Storage temperature
Tstg
-55 to +150
1
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SMD Type
Transistors
2SD1611
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
IE = 0.1 A, IC = 0
Min
5
Typ
Max
100
Unit
V
Emitter-base voltage (Collector open)
Collector-emitter sustaining voltage*
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
VEBO
VCEO(SUS)
ICBO
IC = 2 A, L = 10 mH
VCB = 350 V, IE = 0
400
V
ìA
hFE
VCE = 2 V, IC = 2 A
500
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
IC = 3 A, IB = 0.06 A
IC = 3 A, IB = 0.06 A
VCE = 10 V, IC = 1 A, f = 1 MHz
1.5
2.5
V
V
15
MHz
*. VCEO(SUS) Test circuit
2
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