2SD1610D [ETC]
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126 ; 晶体管| BJT | NPN | 200V V（ BR ） CEO | 100MA I（C ） | TO- 126\n
| 型号： | 2SD1610D |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-126
|
| 文件： | 总6页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1609, 2SD1610
Silicon NPN Epitaxial
ADE-208-916 (Z)
1st. Edition
Sep. 2000
Application
Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
VCBO
VCEO
VEBO
IC
2SD1609
160
2SD1610
200
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
160
200
V
5
5
V
100
100
mA
W
Collector power dissipation
Junction temperature
Storage temperature
PC
1.25
1.25
Tj
150
150
°C
°C
Tstg
–45 to +150
–45 to +150
2SD1609, 2SD1610
Electrical Characteristics (Ta = 25°C)
2SD1609
2SD1610
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
160
160
5
—
—
—
—
—
—
200
200
5
—
—
—
—
—
—
V
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Collector to emitter
breakdown voltage
V
Emitter to base
V
breakdown voltage
Collector cutoff current ICBO
—
—
60
30
—
—
—
—
—
—
—
—
10
—
—
—
60
30
—
—
—
—
—
—
—
—
—
µA
VCB = 140 V, IE = 0
VCB = 160 V, IE = 0
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 10 mA
IC = 30 mA, IB = 3 mA
10
320
—
1
DC current tarnsfer ratio hFE1
hFE2
*
320
—
Base to emitter voltage VBE
1.5
2
1.5
2
V
V
Collector to emitter
saturation voltage
VCE(sat)
Gain bandwidth product fT
—
—
140
3.8
—
—
—
—
140
3.8
—
—
MHz VCE = 5 V, IC = 10 mA
Collector output
capacitance
Cob
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Note: 1. The 2SD1609 and 2SD1610 are grouped by hFE1 as follows.
B
C
D
60 to 120
100 to 200 160 to 320
Maximum Collector Dissipation
Curve
Typical Output Characteristics
1.5
20
16
12
8
120
110
100
90
80
70
60
50
40
1.0
0.5
30
20
4
10 µA
IB = 0
0
2
4
6
8
10
0
50
100
150
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C)
2
2SD1609, 2SD1610
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
VCE = 5 V
500
100
50
VCE = 5 V
Pulse
200
100
50
Ta = 75°C
20
10
5
–25
25
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
1
2
5
10
20
50 100
Collector current IC (mA)
Base to emitter voltage VBE (V)
Gain Bandwidth Product vs.
Collector Current
Saturation Voltage vs. Collector Current
5
500
VCE = 10 V
IC = 10 IB
Pulse
2
200
100
50
VBE(sat)
1.0
0.5
25
0.2
0.1
20
10
5
VCE(sat)
0.05
1
2
5
10
20
50 100
0.5 1.0
2
5
10
20
50
Collector current IC (mA)
Collector current IC (mA)
3
2SD1609, 2SD1610
Collector Output Capacitance vs.
Collector to Base Voltage
50
f = 1 MHz
20
10
5
I
E = 0
2
1.0
0.5
1
2
5
10
20
50 100
Collector to base voltage VCB (V)
4
2SD1609, 2SD1610
Package Dimensions
Unit: mm
8.0 ± 0.5
2.7 ± 0.4
+0.15
φ
3.1–0.1
120°
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5 0.55
1.2
Hitachi Code
JEDEC
TO-126 Mod
—
EIAJ
—
Mass (reference value)
0.67 g
5
2SD1609, 2SD1610
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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For further information write to:
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(America) Inc.
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Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
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World Finance Centre,
Tel: <1> (408) 433-1990 Germany
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Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
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Tel : <886>-(2)-2718-3666
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Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
6
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