2SC3944A [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SC3944A
型号: 2SC3944A
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:81K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3944 2SC3944A  
DESCRIPTION  
·
·With TO-220Fa package  
·Complement to type 2SA1535/1535A  
·High transition frequency  
APPLICATIONS  
·For low-frequency driver and high  
power amplification  
·Optimum for the driver-stage of a 60W  
to 100W output amplifier  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220Fa) and symbol  
3
Absolute maximum ratings (Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
150  
180  
150  
180  
5
UNIT  
2SC3944  
2SC3944A  
2SC3944  
2SC3944A  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
1.0  
ICM  
Collector current-peak  
1.5  
Ta=25  
TC=25℃  
2.0  
PC  
Collector power dissipation  
W
15  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3944 2SC3944A  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
150  
180  
5
TYP.  
MAX  
UNIT  
2SC3944  
Collector-emitter  
breakdown voltage  
V(BR)CEO  
IC=1mA; IB=0  
V
2SC3944A  
V(BR)EBO  
Emitter-base breakdown voltage  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
IE=10μA; IC=0  
V
V
V
VCEsat  
IC=0.5 A;IB=50m A  
IC=0.5 A;IB=50m A  
VCB=150V; IE=0  
2.0  
2.0  
VBEsat  
2SC3944  
Collector  
cut-off current  
ICBO  
10  
μA  
2SC3944A  
VCB=180V; IE=0  
hFE-1  
hFE-2  
fT  
DC current gain  
IC=150mA ; VCE=10V  
IC=500mA ; VCE=5V  
IC=50mA ; VCB=10V  
IE=0; VCB=10V;f=1MHz  
95  
50  
220  
DC current gain  
Transition frequency  
Output capacitance  
200  
30  
MHz  
pF  
COB  
‹ hFE classifications  
Q
R
95-155  
130-220  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3944 2SC3944A  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)  
3

相关型号:

2SC3944AP

TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | SOT-186
ETC

2SC3944AQ

Transistor
ISC

2SC3944AR

TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | SOT-186
ETC

2SC3944AS

TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | SOT-186
ETC

2SC3944P

TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SOT-186
ETC

2SC3944Q

TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SOT-186
ETC

2SC3944R

TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SOT-186
ETC

2SC3944S

TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SOT-186
ETC

2SC3945

Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
PANASONIC

2SC3946

Silicon NPN triple diffusion planar type(For color TV horizontal deflection driver)
PANASONIC

2SC3947

Silicon High Speed Power Transistor
FUJITSU

2SC3947

Silicon NPN Power Transistors
JMNIC