2SC3856P [ISC]
暂无描述;
| 型号： | 2SC3856P |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | 暂无描述 晶体 晶体管 放大器 局域网 |
| 文件： | 总4页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3856
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1492
APPLICATIONS
·Audio and general purpose
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
200
180
6
UNIT
V
Open base
V
Open collector
V
15
A
IB
Base current
4
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
130
150
-55~150
W
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3856
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=50mA ;IB=0
180
IC=5A ;IB=0.5A
2.0
100
100
180
V
VCB=200V ;IE=0
VEB=6V; IC=0
μA
μA
IEBO
hFE
DC current gain
IC=3A ; VCE=4V
IE=0 ; VCB=10V,f=1MHz
IC=0.5A ; VCE=12V
50
COB
Output capacitance
300
20
pF
fT
Transition frequency
MHz
Switching times
ton
Turn-on time
0.50
1.80
0.60
μs
μs
μs
IC=10A;RL=4Ω
IB1=- IB2=1A
ts
Storage time
Fall time
V
CC=40V
tf
hFE Classifications
O
P
Y
50-100
70-140
90-180
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3856
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3856
4
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