2SC3857 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SC3857 |
厂家: | Savantic, Inc. |
描述: | Silicon NPN Power Transistors |
文件: | 总4页 (文件大小:168K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3857
DESCRIPTION
·With MT-200 package
·Complement to type 2SA1493
APPLICATIONS
·Audio and general purpose
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (MT-200) and symbol
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
200
200
6
UNIT
V
Open base
V
Open collector
V
15
A
IB
Base current
5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
150
150
-55~150
W
ꢀ
Tj
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3857
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter breakdown voltage IC=50mA; IB=0
200
V
V
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=10 A;IB=1 A
3.0
100
100
180
VCB=200V; IE=0
VEB=6V; IC=0
µA
µA
IEBO
hFE
IC=5A ; VCE=4V
IE=-0.5A ; VCE=12V
IE=0; VCB=10V;f=1MHz
50
fT
Transition frequency
20
MHz
pF
COB
Output capacitance
250
Switching times
ton
Turn-on time
0.30
2.40
0.40
µs
µs
µs
IC=5A;RL=12Ω
IB1=- IB2=0.5A
VCC=60V
ts
Storage time
Fall time
tf
ꢀ hFE classifications
O
P
Y
50-100
70-140
90-180
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3857
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3857
4
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