2SC3856Y [SANKEN]
Power Bipolar Transistor, 15A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN;
| 型号： | 2SC3856Y |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Power Bipolar Transistor, 15A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN 晶体 晶体管 放大器 局域网 |
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2 S C3 8 5 6
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492)
Application : Audio and General Purpose
External Dimensions MT-100(TO3P)
■Absolute maximum ratings
■Electrical Characteristics
(Ta=25°C)
(Ta=25°C)
Symbol
ICBO
Symbol
VCBO
VCEO
VEBO
IC
2SC3856
Unit
µA
µA
V
2SC3856
Unit
V
Conditions
VCB=200V
±0.2
4.8
±0.4
15.6
±0.1
2.0
100max
100max
180min
50min
9.6
200
IEBO
180
V
VEB=6V
V(BR)CEO
hFE
6
V
IC=50mA
a
b
±0.1
ø3.2
VCE=4V, IC=3A
IC=5A, IB=0.5A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
15
4
A
VCE(sat)
fT
V
MHz
pF
IB
2.0max
20typ
A
PC
130(Tc=25°C)
150
W
°C
°C
2
COB
Tj
300typ
3
+0.2
-0.1
+0.2
-0.1
Tstg
1.05
0.65
1.4
–55 to +150
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
±0.1
±0.1
5.45
5.45
■Typical Switching Characteristics (Common Emitter)
B
C
E
Weight : Approx 6.0g
a. Type No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
b. Lot No.
40
4
10
10
–5
1
–1
0.5typ
1.8typ
0.6typ
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
15
15
3
10
10
2
1
50mA
5
5
IB=20mA
IC=10A
5A
0
0
0
0
1
2
3
4
0
0.5
1.0
1.5
2.0
0
1
2
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=4V)
(VCE=4V)
3
300
200
125˚C
100
1
25˚C
Typ
100
50
0.5
50
–30˚C
20
0.02
20
0.02
0.1
1
10
100
Time t(ms)
1000 2000
0.1
0.5
1
5
10 15
0.1
0.5
1
5
10 15
Collector Current IC(A)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
40
130
100
30
20
Typ
10
5
1
50
10
0.5
Without Heatsink
Natural Cooling
Without Heatsink
3.5
0
0
–0.02
0.1
3
10
100
200
–0.1
–1
Emitter Current IE(A)
–10
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
78
相关型号：
2SC3857P
Power Bipolar Transistor, 15A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT200, 3 PIN
SANKEN
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