2SC3857 [SANKEN]
Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose); 硅NPN三重扩散平面晶体管（音频和通用）
| 型号： | 2SC3857 |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose) |
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2 S C3 8 5 7
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493)
Application : Audio and General Purpose
External Dimensions MT-200
■Absolute maximum ratings (Ta=25°C)
■Electrical Characteristics
(Ta=25°C)
Symbol
ICBO
Conditions
2SC3857
Symbol
2SC3857
Unit
µA
µA
V
Unit
V
±0.2
6.0
±0.3
36.4
VCB=200V
100max
100max
200min
50min
VCBO
VCEO
VEBO
IC
200
±0.2
24.4
2.1
±0.1
2-ø3.2
IEBO
VEB=6V
9
200
V
V(BR)CEO
hFE
IC=50mA
6
V
VCE=4V, IC=5A
IC=10A, IB=1A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
15
5
A
a
b
V
MHz
pF
VCE(sat)
fT
3.0max
20typ
IB
A
PC
150(Tc=25°C)
150
W
°C
°C
2
3
COB
250typ
Tj
+0.2
-0.1
0.65
+0.2
-0.1
1.05
Tstg
–55 to +150
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
+0.3
-0.1
3.0
±0.1
±0.1
5.45
5.45
■Typical Switching Characteristics (Common Emitter)
B
C
E
Weight : Approx 18.4g
a. Type No.
b. Lot No.
VCC
(V)
RL
IC
VBB1
VBB2
(V)
IB1
IB2
ton
tstg
tf
(Ω)
(A)
(V)
(A)
(A)
(µs)
(µs)
(µs)
60
12
5
10
–5
0.5
–0.5
0.3typ
2.4typ
0.4typ
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
15
15
10
5
3
10
2
1
5
IC=15A
10A
5A
0
0
0
0
1
2
3
4
0
1
2
3
4
0
1
2
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=4V)
(VCE=4V)
300
2
1
300
125˚C
Typ
0.5
100
50
25˚C
100
50
–30˚C
20
0.02
20
0.02
0.1
0.1
0.5
1
5
10 15
1
10
100
Time t(ms)
1000 2000
0.1
0.5
1
5
10 15
Collector Current IC(A)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
50
160
40
30
20
10ms
120
80
10
5
Typ
1
0.5
Without Heatsink
Natural Cooling
10
0
40
Without Heatsink
5
0
0.1
2
10
100
300
–0.02
–0.1
–1
Emitter Current IE(A)
–10
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
79
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