2SC1617 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC1617 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1617
DESCRIPTION
·
·With TO-3 package
·High voltage: VCBO(min):300V
·Wide safe oprating area
APPLICATIONS
·For B/W white TV horizontal output
applications
PINNING(see fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
300
100
5
UNIT
V
Open emitter
Open base
V
Open collector
V
7
A
IE
Emitter current
-7
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1617
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP. MAX UNIT
Collector-emitter sustaining voltage IC=100mA; IB=0
Collector-emitter saturation voltage IC=5A;IB=0.5 A
100
V
1.2
1.5
1.0
1.0
150
V
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5A;IB=0.5 A
VCB=250V; IE=0
VEB=5V; IC=0
mA
mA
IEBO
hFE-1
IC=1A ; VCE=5V
IC=7A ; VCE=5V
IC=0.5A ; VCE=5V
30
15
hFE-2
DC current gain
fT
Transition frequency
10
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1617
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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