2SC1619 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC1619 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1619
DESCRIPTION
·With TO-3 package
·High current capacity
·Wide safe oprating area
APPLICATIONS
·For audio frequency output applications
PINNING(see fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
ABSOLUTE MAXIMUM RATINGS(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
Open base
100
80
V
Open collector
6
6
V
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
10
A
PC
TC=25ꢀ
50
W
ꢀ
Tj
150
-55~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1619
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
80
6
TYP. MAX UNIT
Collector-emitter sustaining voltage IC=100mA; IB=0
V
V
Emitter-base breakdown voltage
IE=1mA; IC=0
Collector-emitter saturation voltage IC=4A;IB=0.4 A
2.0
2.5
0.1
0.1
180
V
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=4A;IB=0.4 A
VCB=100V; IE=0
VEB=6V; IC=0
mA
mA
IEBO
hFE
IC=3A ; VCE=4V
IC=0.5A ; VCE=12V
20
fT
Transition frequency
10
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1619
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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