2SC1621 [TYSEMI]
High speed : tstg=20ns MAX.Collector to base voltage VCBO 40 V; 高速: TSTG = 20ns的MAX.Collector到基极电压VCBO 40 V型号: | 2SC1621 |
厂家: | TY Semiconductor Co., Ltd |
描述: | High speed : tstg=20ns MAX.Collector to base voltage VCBO 40 V |
文件: | 总2页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Product specification
2SC1621
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
High speed : tstg=20ns MAX.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
40
20
5
V
V
200
mA
mW
Total power dissipation
Junction temperature
PT
200
Tj
150
Storage temperature range
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Symbol
Testconditons
VCB = 30V, IE=0
Min
40
Typ
80
Max
100
100
180
Unit
nA
ICBO
IEBO
hFE
VEB = 4V, IC=0
nA
VCE = 0.5V , IC = 1mA
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
VCE(sat) IC = 10mA , IB = 1mA
VBE(sat) IC = 10mA , IB = 1mA
0.13 0.25
0.74 0.85
500
V
V
fT
Cob
ton
VCE = 10V , IE = -10mA
200
MHz
pF
ns
VCB = 10V , IE = 0 , f = 1.0MHz
See Test Circuit
3.0
12
7
6.0
20
20
40
Turn-on time
Storage time
tstg
toff
ns
Turn-off time
18
ns
*. PW 350ìs,duty cycle 2%
4008-318-123
http://www.twtysemi.com
1 of 2
sales@twtysemi.com
Product specification
2SC1621
hFE Classification
Marking
hFE
B2
40 80
B3
B4
60 120
90 180
4008-318-123
http://www.twtysemi.com
2 of 2
sales@twtysemi.com
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