2SC1618 [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SC1618
型号: 2SC1618
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:129K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC1618  
DESCRIPTION  
·
·With TO-3 package  
·High current capacity  
·Wide safe oprating area  
APPLICATIONS  
·For audio frequency output applications  
PINNING(see fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
3
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
UNIT  
V
Open emitter  
Open base  
80  
60  
V
Open collector  
6
6
V
A
ICM  
Collector current-peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
10  
A
PC  
TC=25  
50  
W
Tj  
150  
-55~150  
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC1618  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
VCEO(SUS)  
V(BR)EBO  
VCEsat  
VBEsat  
ICBO  
PARAMETER  
CONDITIONS  
MIN  
60  
6
TYP. MAX UNIT  
Collector-emitter sustaining voltage IC=100mA; IB=0  
V
V
Emitter-base breakdown voltage  
IE=1mA; IC=0  
Collector-emitter saturation voltage IC=4A;IB=0.4 A  
2.0  
2.5  
0.1  
0.1  
180  
V
V
Base-emitter saturation voltage  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
IC=4A;IB=0.4 A  
VCB=80V; IE=0  
VEB=6V; IC=0  
mA  
mA  
IEBO  
hFE  
IC=3A ; VCE=4V  
IC=0.5A ; VCE=12V  
20  
fT  
Transition frequency  
10  
MHz  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC1618  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3

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