2N4912 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2N4912 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2N4912
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
·Low Collector Saturatioin Voltage-
: VCE(sat)= 0.6V(Max.)@ IC= 1A
·Wide Area of Safe Operation
·Complement to Type 2N4900
APPLICATIONS
·Designed for driver circuits, switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
80
80
V
5
V
Collector Current-Continuous
Collector Current-Peak
Collector Current-Continuous
1
A
ICM
4
1
A
IB
A
Collector Power Dissipation
@ TC=25℃
PC
25
W
℃
℃
TJ
Junction Temperature
200
Storage Temperature Range
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
7.0 ℃/W
Thermal Resistance,Junction to Case
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2N4912
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
80
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
IC= 1A; IB= 0.1A
IC= 1A; IB= 0.1A
IC= 1A ; VCE= 1V
0.6
1.3
1.3
V
VCE
VBE
VBE
(sat)
(sat)
(on)
V
V
VCE= 80V;VBE( )= 1.5V
0.1
1.0
off
ICEX
mA
mA
mA
mA
VCE= 80V;VBE( )= 1.5V;TC=150℃
off
ICEO
ICBO
IEBO
hFE-1
hFE-2
hFE-3
fT
VCE= 40V; IB= 0
0.5
0.1
1.0
VCB= 60V; IE= 0
VEB= 5V; IC= 0
DC Current Gain
IC= 50mA ; VCE= 1V
IC= 500mA ; VCE= 1V
IC= 1A ; VCE= 1V
40
20
10
3
DC Current Gain
100
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
MHz
pF
IC= 0.25A;VCE= 10V, ftest= 1MHz
IE= 0;VCB= 10V; ftest= 100kHz
COB
100
2
isc Website：www.iscsemi.cn
相关型号：
2N4913LEADFREE
Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL
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