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2N3442 [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2N3442
型号： 2N3442
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 开关 局域网
文件： 总3页 (文件大小：130K)
中文：  中文翻译
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Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N3442  
DESCRIPTION  
·With TO-3 package  
·Excellent safe operating area  
APPLICATIONS  
·For industrial and commercial equipment  
including high fidelity audio amplifiers,  
series and shunt regulators and power  
switches applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
160  
UNIT  
V
Open base  
140  
V
Open collector  
7
V
10  
A
ICM  
Collector current-peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
15  
A
PC  
TC=25℃  
117  
W
℃
℃
Tj  
150  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Thermal resistance junction to case  
1.5  
℃/W  
R(th) jc  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N3442  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(sat)  
VBE(on)  
ICEO  
PARAMETER  
Collector-emitter sustaining voltage  
Collector-emitter saturation voltage  
Base-emitter on voltage  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
IC=0.2A ;IB=0  
140  
IC=10A; IB=2A  
IC=10A ; VCE=4V  
VCE=140V; IB=0  
5.0  
5.7  
200  
V
V
mA  
mA  
mA  
VCE=140V; VBE(off)=1.5V  
TC=150℃  
5.0  
30  
ICEX  
IEBO  
VEB=7V; IC=0  
5.0  
70  
hFE-1  
DC current gain  
IC=3A ; VCE=4V  
20  
7.5  
80  
hFE-2  
DC current gain  
IC=10A ; VCE=4V  
IC=2.0A ; VCE=4V;ft=40kHz  
fT  
Transition frequency  
kHz  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N3442  
PACKAGE OUTLINE  
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)  
3

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