2N3442/D [ETC]
High-Power Industrial Transistors ; 大功率晶体管产业\n
| 型号： | 2N3442/D |
| 厂家： | 
ETC |
| 描述： | High-Power Industrial Transistors
|
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
2N3442
High-Power Industrial
Transistors
NPN silicon power transistor designed for applications in industrial
and commercial equipment including high fidelity audio amplifiers,
series and shunt regulators and power switches.
10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS
117 WATTS
• Collector –Emitter Sustaining Voltage —
V
= 140 Vdc (Min)
CEO(sus)
• Excellent Second Breakdown Capability
CASE 1–07
TO–204AA
(TO–3)
*MAXIMUM RATINGS
Rating
Symbol
Value
140
160
7.0
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CB
EB
V
Collector Current — Continuous
Collector Current — Peak
I
C
10
15**
Base Current — Continuous
Peak
I
B
7.0
—
Adc
Total Power Dissipation @ T = 25_C
P
D
117
0.67
Watts
W/_C
C
Derate above 25_C
Operating and Storage Junction
Temperature Range
T , T
–65 to +200
_C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
1.5
_C/W
θ
JC
*Indicates JEDEC Registered Data.
**This data guaranteed in addition to JEDEC registered data.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2001 – Rev. 10
2N3442/D
2N3442
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
V
140
—
—
Vdc
CEO(sus)
(I = 200 mAdc, I = 0)
C
B
Collector Cutoff Current
(V = 140 Vdc, I = 0)
I
200
mAdc
mAdc
CEO
CE
B
Collector Cutoff Current
I
CEX
(V = 140 Vdc, V
(V = 140 Vdc, V
CE
= 1.5 Vdc)
= 1.5 Vdc, T = 150_C)
—
—
5.0
30
CE
BE(off)
BE(off)
C
Emitter Cutoff Current
(V = 7.0 Vdc, I = 0)
I
—
5.0
mAdc
—
EBO
BE
C
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
(I = 3.0 Adc, V = 4.0 Vdc)
20
7.5
70
—
C
CE
(I = 10 Adc, V = 4.0 Vdc)
C
CE
Collector–Emitter Saturation Voltage
(I = 10 Adc, I = 2.0 Adc)
V
—
—
5.0
Vdc
Vdc
CE(sat)
C
B
Base–Emitter On Voltage
(I = 10 Adc, V = 4.0 Vdc)
V
BE(on)
5.7
C
CE
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
f
80
12
—
kHz
—
T
(I = 2.0 Adc, V = 4.0 Vdc, f = 40 kHz)
test
C
CE
Small–Signal Current Gain
(I = 2.0 Adc, V = 4.0 Vdc, f = 1.0 kHz)
h
72
fe
C
CE
*Indicates JEDEC Registered Data.
NOTES:
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%.
2. f = |h | • f
test
T
fe
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
200
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
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2
2N3442
ACTIVE REGION SAFE OPERATING AREA INFORMATION
20
10
10 µs
There are two limitations on the power–handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I – V
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
dc
30 µs
7.0
5.0
C
CE
3.0
2.0
50 µs
100 µs
T = 200°C
J
The data of Figure 2 is based on T
= 200_C; T is vari-
J(pk)
C
1.0
1.0 ms
100 ms
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power that can be han-
dled to values less than the limitations imposed by second
breakdown.
0.7
0.5
CURRENT LIMIT
THERMAL LIMIT @ T = 25°C
SINGLE PULSE
C
0.3
0.2
SECOND BREAKDOWN LIMIT
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. 2N3442
400
200
1.4
1.2
T = 150°C
J
V
CE
= 4.0 V
I
C
= 1.0 A
2.0 A
4.0 A
8.0 A
1.0
0.8
100
-ā55°C
25°C
60
40
0.6
0.4
20
10
0.2
0
6.0
4.0
T = 25°C
J
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
2.0
5.0
10 20
50 100 200
500 1.0Ăk 2.0Ăk
I , COLLECTOR CURRENT (AMP)
C
I , BASE CURRENT (mA)
B
Figure 3. DC Current Gain
Figure 4. Collector–Saturation Region
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3
2N3442
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
SEATING
PLANE
–T–
E
K
D 2 PL
INCHES
DIM MIN MAX
1.550 REF
MILLIMETERS
M
M
M
Y
0.13 (0.005)
T
Q
MIN
MAX
A
B
C
D
E
G
H
K
L
39.37 REF
U
---
0.250
0.038
0.055
1.050
---
6.35
0.97
1.40
26.67
8.51
1.09
1.77
–Y–
L
V
H
0.335
0.043
0.070
2
1
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
---
0.151
0.830
0.165
---
3.84
21.08
4.19
–Q–
0.13 (0.005)
M
M
Y
T
1.187 BSC
30.15 BSC
0.131
0.188
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
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2N3442/D
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