2N3442G [ONSEMI]
High−Power Industrial Transistors; 大功率晶体管产业
| 型号： | 2N3442G |
| 厂家： | 
ONSEMI |
| 描述： | High−Power Industrial Transistors |
| 文件： | 总3页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3442
2N4347
HIGH POWER INDUSTRIAL TRANSISTORS
NPN silicon transistors designed for applications in industrial and commercial equipment including high
fidelity audio amplifiers, series and shunts regulators and power switches.
•
Low Collector-Emitter Saturation Voltage –
CE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347
V
•
Collector-Emitter Sustaining Voltage-
VCEO(sus) = 120 Vdc (Min) – 2N4347
140 Vdc (Min) – 2N3442
•
Excellent Second-Breakdown Capability
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
120
140
140
160
#Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
VCEO
VCB
VEB
V
Vdc
Vdc
7.0
5.0
10
10
15 (**)
3.0
7.0
8.0
-
100
117
0.57
0.67
Continuous
IC
Collector Current
Adc
Adc
Peak
Continuous
Peak
IB
Base Current
@ TC = 25°
Total Device Dissipation
Watts
W/°C
PD
Derate
above 25°
Junction Temperature
Storage Temperature
TJ
TS
°C
°C
-65 to +200
(**) This data guaranteed in addition to JEDEC registered data.
CO MSET SEMICO N DUCTO RS
1/3
2N3442
2N4347
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
2N4347
2N3442
1.75
1.5
Thermal Resistance, Junction to Case
RthJC
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
VCEO(SUS)
Ratings
Min Typ Mx Unit
2N4347 120
2N3442 140
-
-
-
-
Collector-Emitter
Sustaining Voltage (1)
IC=200 mAdc, IB=0
Vdc
IC=0.1 Adc
IC=0.2 Adc
2N4347 130
-
-
-
VCER(SUS)
RBE=100Ω
Collector-Emitter
Sustaining Voltage
V
2N3442
150
-
-
-
VCE=100 Vdc, IB=0
2N4347
2N3442
200
200
2.0
10
Collector-Emitter Current
ICEO
mAdc
VCE=140 Vdc, IB=0
VCE=125 Vdc, VEB(off)=1.5 Vdc
-
-
2N4347
2N3442
VCE=120 Vdc, VEB(off)=1.5 Vdc,
TC = 150°C
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICEX
mAdc
VCE=140 Vdc, VEB(off)=1.5 Vdc
-
-
-
-
-
-
5.0
30
VCE=140 Vdc, VEB(off)=1.5 Vdc,
TC = 150°C
2N4347
2N3442
VBE=7.0 Vdc, IC=0
IEBO
5.0 mAdc
60
IC=2.0 Adc, VCE=4.0 Vdc
IC=5.0 Adc, VCE=4.0 Vdc
IC=3.0 Adc, VCE=4.0 Vdc
IC=10 Adc, VCE=4.0 Vdc
15
10
20
4.0
-
-
-
-
2N4347
2N3442
-
hFE
-
70
-
IC=2.0 Adc, IB=200 mAdc
IC=5.0 Adc, IB=0.63 Adc
IC=3.0 Adc, IB=0.3 Adc
IC=10 Adc, IB=0.2 Adc
-
-
-
-
-
-
-
-
1.0
2N4347
2N3442
Collector-Emitter
saturation Voltage
2.0
Vdc
1.0
VCE(SAT)
5.0
CO MSET SEMICO N DUCTO RS
2/3
2N3442
2N4347
Test Condition(s)
IC=2.0 Adc, VCE=4.0 Vdc
Symbol
VBE(on)
Ratings
Min Typ Mx Unit
-
-
-
-
-
-
-
-
2.0
3.0
1.7
5.7
2N4347
2N3442
IC=5.0 Adc, VCE=4.0 Vdc
IC=3.0 Adc, VCE=4.0 Vdc
IC=10 Adc, VCE=4.0 Vdc
Base-Emitter Voltage
Vdc
VCE=4.0 Vdc, IC=0.5 Adc, f=1.0
kHz
VCE=4.0 Vdc, IC=2.0 Adc, f=1.0
kHz
2N4347 40
2N3442 12
2N4347 200
2N3442 80
2N4347 1.0
2N3442 1.0
-
-
-
-
-
-
-
72
-
Small Signal Current Gain
-
kHz
s
hfe
VCE=4.0 Vdc, IC=0.5 Adc, ftest
50 kHz
=
Current Gain – Bandwith
Product (2)
fT
VCE=4.0 Vdc, IC=2.0 Adc, ftest
40 kHz
=
-
Second Breakdown
Collector Current
VCE=67 Vdc, IC=1.5 Adc
VCE=78 Vdc, IC=1.5 Adc
-
Is/b
-
(1) Pulse Width ≈ 300 µs, Duty Cycle 2.0%
(2) fT = |hfe| * ftest
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
A
B
C
D
E
G
H
L
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
M
N
P
0,77
0,04
0,16
4,06
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
CO MSET SEMICO N DUCTO RS
3 /3
相关型号：
2N3444LEADFREE
Small Signal Bipolar Transistor, 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
CENTRAL
2N3445
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
APITECH
©2020 ICPDF网 联系我们和版权申明