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2N3442_12 [COMSET]

HIGH POWER INDUSTRIAL TRANSISTORS; 大功率工业TRANSISTORS
2N3442_12
型号： 2N3442_12
厂家： COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述：

HIGH POWER INDUSTRIAL TRANSISTORS
大功率工业TRANSISTORS

高功率电源
文件： 总3页 (文件大小：80K)
中文：  中文翻译
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NPN 2N3442 – 2N4347  
HIGH POWER INDUSTRIAL TRANSISTORS  
NPN silicon transistors in Jedec TO-39 metal case.  
They are designed for applictions in industrial and commercial equipment including high fidelity  
audio amplifiers, series and shunts regulators and power switches.  
Low Collector-Emitter Saturation Voltage.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
2N4347  
2N3442  
2N4347  
2N3442  
2N4347  
2N3442  
2N4347  
2N3442  
2N4347  
2N3442  
2N4347  
2N3442  
2N4347  
2N3442  
2N4347  
2N3442  
2N4347  
2N3442  
2N4347  
2N3442  
2N4347  
2N3442  
120  
140  
140  
160  
Collector-Emitter  
Voltage  
VCEO  
VCB  
VEB  
V
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
7
5
10  
10  
15 (**)  
3
7
8
-
100  
117  
0.57  
0.67  
Continuous  
Peak  
IC  
Collector Current  
Base Current  
A
A
Continuous  
Peak  
IB  
@ TC = 25°  
Derate above 25°  
W
W/°C  
°C  
Total Device  
Dissipation  
PD  
TJ  
TS  
Junction Temperature  
Storage Temperature  
-65 to +200  
°C  
(**) This data guaranteed in addition to JEDEC registered data.  
THERMAL CHARACTERISTICS  
Symbol  
RthJC  
Ratings  
Value  
Unit  
2N4347  
2N3442  
1.75  
1.5  
Thermal Resistance, Junction to Case  
°C/W  
1
NPN 2N3442 – 2N4347  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Symbol  
Ratings  
Test Condition(s)  
Min Typ Max Unit  
2N4347 120  
2N3442 140  
-
-
-
-
-
Collector-Emitter  
Sustaining Voltage (*)  
Collector-Emitter  
Current  
VCEO(SUS)  
ICEO  
IC=200 mA, IB=0  
V
VCE=100 V, IB=0  
VCE=140 V, IB=0  
2N4347  
2N3442  
-
200  
200  
2.0  
mA  
VCE=125 V, VEB(off)=1.5 V  
VCE=120 V, VEB(off)=1.5 V  
TC = 150°C  
VCE=140 V, VEB(off)=1.5 V  
VCE=140 V, VEB(off)=1.5 V  
TC = 150°C  
-
-
2N4347  
2N3442  
10  
5.0  
30  
Collector Cutoff  
Current  
ICEX  
mA  
-
-
-
-
2N4347  
2N3442  
IEBO  
Emitter Cutoff Current VBE=7 V, IC=0  
IC=2 A, VCE=4.0 V  
-
-
-
-
5.0  
60  
-
mA  
-
15  
10  
2N4347  
2N3442  
IC=5 A, VCE=4 V  
DC Current Gain  
hFE  
IC=3 A, VCE=4 V  
IC=10 A, VCE=4 V  
20  
7.5  
-
-
-
-
-
-
-
-
70  
-
IC=2 A, IB=200 mA  
IC=5 A, IB=630 mA  
IC=10 A, IB=200 mA  
-
-
-
-
-
-
1.0  
2.0  
5.0  
2.0  
3.0  
5.7  
2N4347  
2N3442  
2N4347  
2N3442  
2N4347  
Collector-Emitter  
saturation Voltage  
VCE(SAT)  
V
V
IC=2 A, VCE=4 V  
IC=5 A, VCE=4 V  
Base-Emitter Voltage  
VBE(on)  
IC=10 A, VCE=4 V  
VCE=4 V, IC=500 mA  
40  
12  
-
-
-
Small Signal Current  
f=1 kHz  
hfe  
Gain  
-
VCE=4 V, IC=2A  
2N3442  
2N4347  
2N3442  
72  
f=1 kHz  
IC=100 mA  
Collector-Emitter  
IC=200 mA  
130  
-
-
-
-
-
-
-
-
-
-
VCER(SUS)  
Sustaining Voltage  
IC=100 mA  
V
RBE=100Ω  
IC=200 mA  
150  
VCE=4 V, IC=500 mA  
2N4347 200  
-
-
-
-
f
test = 50 kHz  
Current Gain –  
Bandwith Product  
fT  
kHz  
s
VCE=4 V, IC=500 mA ftest  
= 50 kHz  
2N3442  
80  
Second Breakdown  
Collector Current  
VCE=67 V, IC=1.5 A  
VCE=78 V, IC=1.5 A  
2N4347  
2N3442  
1.0  
1.0  
-
-
-
-
Is/b  
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%  
05/11/2012  
COMSET SEMICONDUCTORS  
2 | 3  
NPN 2N3442 – 2N4347  
MECHANICAL DATA CASE TO-3  
DIMENSIONS (mm)  
min  
max  
13.10  
A
B
C
D
F
11  
0.97  
1.5  
1.15  
1.65  
8.92  
20  
8.32  
19  
G
N
P
R
U
V
10.70  
16.50  
25  
11.1  
17.20  
26  
4
4.09  
39.30  
30.30  
38.50  
30  
Pin 1 :  
Pin 2 :  
Case :  
Base  
Emitter  
Collector  
Revised September 2012  
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change  
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and  
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical  
components in life support devices or systems.  
www.comsetsemi.com  
05/11/2012  
info@comsetsemi.com  
COMSET SEMICONDUCTORS  
3 | 3  

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