JANSR2N7268U [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1); 抗辐射功率MOSFET表面贴装（ SMD - 1 ）
| 型号： | JANSR2N7268U |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) |
| 文件： | 总12页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90720C
IRHN7150
JANSR2N7268U
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
100V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHN7150
IRHN3150
IRHN4150
IRHN8150
100K Rads (Si) 0.065Ω
300K Rads (Si) 0.065Ω
600K Rads (Si) 0.065Ω
1000K Rads (Si) 0.065Ω
34A JANSR2N7268U
34A JANSF2N7268U
34A JANSG2N7268U
34A JANSH2N7268U
SMD-1
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for bothTotal Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
34
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
21
136
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
150
W
W/°C
V
D
C
Linear Derating Factor
1.2
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
34
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
15
mJ
V/ns
AR
dv/dt
5.5
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
PCKG. Mounting Surface Temp.
Weight
300 ( for 5s)
2.6 (Typical )
For footnotes refer to the last page
www.irf.com
1
02/01/01
IRHN7150, JANSR2N7268U
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
=0 V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.13
DSS
J
D
Voltage
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.0
8.0
—
—
—
—
—
—
—
0.065
0.070
4.0
V
V
= 12V, I = 21A
D
DS(on)
GS
GS
Ω
= 12V, I = 34A
D
V
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
—
S ( )
V
> 15V, I
= 21A
DS
V
DS
I
25
250
= 160V,V =0V
DSS
DS GS
µA
—
V
= 80V
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
160
35
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
= 12V, I = 34A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
V
= 50V
DS
65
t
t
t
t
45
V
= 50V, I = 34A,
DD D
V = 12V, R =2.35Ω
GS
190
170
130
—
G
ns
d(off)
f
L
L
Total Inductance
S +
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
—
—
—
4300
1200
200
—
—
—
V
= 0V, V
= 25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
34
136
1.4
570
5.8
S
A
SM
V
T = 25°C, I = 34A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
nS
µC
T = 25°C, I = 34A, di/dt ≥ 100A/µs
j
F
Q
Reverse Recovery Charge
V
DD
≤ 25V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-PC board
—
—
—
6.6
0.83
—
thJC
thJ-PCB
°C/W
soldered to a 1”sq. copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHN7150, JANSR2N7268U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
1
Parameter
Min
Drain-to-Source Breakdown Voltage 200
100KRads(Si)
600 to 1000K Rads (Si)2 Units
Test Conditions
Max
Min
Max
BV
—
200
1.25
—
—
4.5
100
-100
50
V
= 0V, I = 1.0mA
GS D
DSS
V
V
Gate Threshold Voltage
2.0
—
—
—
—
4.0
V
= V , I = 1.0mA
GS
DS D
GS(th)
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-1)
Diode Forward Voltage
100
-100
25
V
GS
= 20V
GSS
nA
I
—
V
GS
= -20 V
GSS
I
—
µA
V
=80V, V =0V
DS GS
DSS
R
DS(on)
➀
0.065
—
0.09
Ω
V
= 12V, I =21A
D
GS
GS
R
DS(on)
➀
—
—
0.065
1.4
—
—
0.09
1.4
Ω
V
= 12V, I =21A
D
V
SD
➀
V
V = 0V, I = 34A
GS S
1. Part number IRHN7150 (JANSR2N7268U)
2. Part numbers IRHN3150 (JANSF2N7268U), IRHN4150 (JANSG2N7268U) and IRHN8150 (JANSH2N7268U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
MeV/(mg/cm2))
28
Energy
(MeV)
285
Range
VDS(V)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43
39
Cu
Br
100
100
100
90
100
70
80
50
60
36.8
305
—
120
100
80
60
40
20
0
Cu
Br
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
Post-Irradiation
IRHN7150, JANSR2N7268U
Fig 2. Typical Response of On-State Resistance
Fig 1. Typical Response of Gate Threshhold
Vs. Total Dose Exposure
Voltage Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Fig 4. Typical Response of Drain to Source
Vs. Total Dose Exposure
Breakdown Vs. Total Dose Exposure
4
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Post-Irradiation
IRHN7150, JANSR2N7268U
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
NeutronFluenceLevel
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
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5
RadiationCharacteristics
IRHN7150, JANSR2N7268U
GS
DS
Note: Bias Conditions during radiation:V = 12 Vdc, V = 0 Vdc
Fig 10. Typical Output Characteristics
Fig 11. Typical Output Characteristics
Pre-Irradiation
Post-Irradiation100KRads(Si)
Fig 12. Typical Output Characteristics
Fig 13. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Post-Irradiation 1 Mega Rads (Si)
6
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Radiation Characteristics
IRHN7150, JANSR2N7268U
GS
DS
Note: Bias Conditions during radiation:V = 0 Vdc, V = 160 Vdc
Fig 14. Typical Output Characteristics
Fig 15. Typical Output Characteristics
Pre-Irradiation
Post-Irradiation 100K Rads (Si)
Fig 16. Typical Output Characteristics
Fig 17. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Post-Irradiation 1 Mega Rads (Si)
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7
IRHN7150, JANSR2N7268U
Pre-Irradiation
Fig 18. Typical Output Characteristics
Fig 19. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
Fig 21. Normalized On-Resistance
Vs.Temperature
8
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Pre-Irradiation
IRHN7150, JANSR2N7268U
Fig 23. Typical Gate Charge Vs.
Fig 22. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 25. Maximum Safe Operating
Fig 24. Typical Source-Drain Diode
Area
ForwardVoltage
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9
IRHN7150, JANSR2N7268U
Pre-Irradiation
35
30
25
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 27a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 26. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 27b. Switching Time Waveforms
Fig28. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
10
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Pre-Irradiation
IRHN7150, JANSR2N7268U
15V
DRIVER
L
V
D S
D.U.T
AS
R
G
+
-
V
D D
I
A
V
2
GS
0.01
Ω
t
p
Fig 29a. Unclamped Inductive Test Circuit
V
(BR)D SS
t
p
Fig 29c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig29b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 30b. Gate Charge Test Circuit
Fig 30a. Basic Gate Charge Waveform
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11
IRHN7150, JANSR2N7268U
Foot Notes:
Pre-Irradiation
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀Total Dose Irradiation with V Bias.
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀➀➀V
= 25V, starting T = 25°C, L=0.86mH
J
GS
DS
DD
Peak I = 34A, V
irradiation per MIL-STD-750, method 1019, condition A.
=12V
L
GS
➀➀Total Dose Irradiation with V Bias.
➀➀ I
SD
≤ 34A, di/dt ≤ 140A/µs,
DS
= 0 during
80 volt V
applied and V
GS
V
≤ 100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
DD
J
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/01
12
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