JANSR2N7270 [INFINEON]
Rad hard, 500V, 11A, single, N-channel MOSFET, R5 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, QPL;
| 型号： | JANSR2N7270 |
| 厂家： | 
Infineon |
| 描述： | Rad hard, 500V, 11A, single, N-channel MOSFET, R5 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, QPL 局域网 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：653K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90819B
IRHN7450
JANSR2N7270U
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
500V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHN7450
IRHN3450
IRHN4450
IRHN8450
100K Rads (Si) 0.45Ω
300K Rads (Si) 0.45Ω
500K Rads (Si) 0.45Ω
1000K Rads (Si) 0.45Ω
11A JANSR2N7270U
11A JANSF2N7270U
11A JANSG2N7270U
11A JANSH2N7270U
SMD-1
International Rectifier’s RAD-HardTM HEXFET®technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of
proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
11
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
7.0
44
D
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
150
W
W/°C
V
D
C
1.2
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
500
mJ
A
AS
I
11
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
15
mJ
V/ns
AR
dv/dt
3.5
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
PCKG. Mounting Surface Temp.
Weight
300 (for 5s)
2.6 (Typical)
For footnotes refer to the last page
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1
05/18/06
IRHN7450, JANSR2N7270U
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
500
—
—
—
—
V
V
=0 V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.6
DSS
J
D
Voltage
R
V
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
—
—
—
—
—
—
0.45
0.50
4.0
—
V
= 12V, I = 7.0A
GS D
DS(on)
Ω
V
GS
= 12V, I = 11A
D
2.0
4.0
—
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
> 15V, I
= 7.0A
DS
I
50
V = 400V,V =0V
DS GS
DSS
µA
—
250
V
= 400V
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
150
30
V
= 20V
GSS
GS
nA
nC
V
= -20V
GSS
GS
Q
Q
Q
V
= 12V, I = 11A
g
gs
gd
d(on)
r
GS D
V
DS
= 250V
75
t
t
t
t
45
V
DD
V
GS
= 250V, I = 11A,
D
190
190
130
—
= 12V, R = 2.35Ω
G
ns
Turn-Off Delay Time
Fall Time
Total Inductance
d(off)
f
L
L
S +
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
4000
330
52
—
—
—
V
GS
= 0V, V = 25V
DS
f = 1.0MHz
iss
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
11
44
S
A
V
SM
V
1.6
T = 25°C, I = 11A, V
= 0V Ã
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
1100 ns
16 µC
T = 25°C, I = 11A, di/dt ≥ 100A/µs
j
rr
RR
F
V
≤ 50V Ã
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
0.83
—
thJC
°C/W
Junction-to-PC board
6.6
soldered to a 1”sq. copper-clad board
thJ-PCB
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHN7450, JANSR2N7270U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100KRads(Si)1
300K- 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
500
2.0
—
—
4.0
500
1.25
—
—
4.5
V
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
= V , I = 1.0mA
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
50
100
-100
50
V
= 20V
GS
GSS
nA
—
—
V
= -20 V
GSS
GS
I
—
—
µA
V
=400V, V = 0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-1)
Diode Forward Voltage
Ã
—
0.45
—
0.6
Ω
V
= 12V, I = 7.0A
GS
GS
GS
DS(on)
D
R
DS(on)
Ã
—
—
0.45
1.6
—
—
0.6
1.6
Ω
V
= 12V, I =7.0A
D
V
SD
Ã
V
V
= 0V, I = 11A
S
1. Part number IRHN7450 (JANSR2N7270U)
2. Part numbers IRHN3450 (JANSF2N7270U), IRHN4450 (JANSG2N7270U) and IRHN8450 (JANSH2N7270U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe OperatingArea
VDS (V)
Ion
LET
(MeV/(mg/cm2)) (MeV)
28 265
Energy Range
@ VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
(µm)
41
Ni
275
275
-
-
-
400
300
200
100
0
Ni
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
Post-Irradiation
IRHN7450, JANSR2N7270U
Fig 1. Typical Response of Gate Threshhold Fig 2. Typical Response of On-State Resistance
Voltage Vs. Total Dose Exposure
Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Fig 4. Typical Response of Drain to Source
Vs. Total Dose Exposure
Breakdown Vs. Total Dose Exposure
4
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Post-Irradiation
IRHN7450, JANSR2N7270U
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
NeutronFluenceLevel
Fig 8a. Gate Stress of
VGSS Equals 12 Volts
DuringRadiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
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5
RadiationCharacteristics
IRHN7450, JANSR2N7270U
GS
DS
Note: Bias Conditions during radiation: V = 12 Vdc, V = 0 Vdc
Fig 10. Typical Output Characteristics
Fig 11. Typical Output Characteristics
Pre-Irradiation
Post-Irradiation100KRads(Si)
Fig 12. Typical Output Characteristics
Fig 13. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Post-Irradiation 1 Mega Rads (Si)
6
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Radiation Characteristics
IRHN7450, JANSR2N7270U
GS
DS
Note: Bias Conditions during radiation: V = 0 Vdc, V = 400 Vdc
Fig 14. Typical Output Characteristics
Fig 15. Typical Output Characteristics
Pre-Irradiation
Post-Irradiation 100K Rads (Si)
Fig 16. Typical Output Characteristics
Fig 17. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Post-Irradiation 1 Mega Rads (Si)
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7
IRHN7450, JANSR2N7270U
Pre-Irradiation
Fig 18. Typical Output Characteristics
Fig 19. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
Fig 21. Normalized On-Resistance
Vs.Temperature
8
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Pre-Irradiation
IRHN7450, JANSR2N7270U
Fig 23. Typical Gate Charge Vs.
Fig 22. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 25. Maximum Safe Operating Area
Fig 24. Typical Source-Drain Diode
ForwardVoltage
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9
IRHN7450, JANSR2N7270U
Pre-Irradiation
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 27a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
Fig 26. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 27b. Switching Time Waveforms
Fig28. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
10
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Pre-Irradiation
IRHN7450, JANSR2N7270U
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
0.01
Ω
t
p
Fig 29a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
Fig 29c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig29b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 30b. Gate Charge Test Circuit
Fig 30a. Basic Gate Charge Waveform
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11
IRHN7450, JANSR2N7270U
Foot Notes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
DS
Á V
= 25V, starting T = 25°C, L 7.4mH
≥
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DD
Peak I = 11A, V
=12V
L
GS
Å Total Dose Irradiation with V Bias.
 I
≤ 11A, di/dt ≤ 140A/µs,
DS
= 0 during
SD
DD
400 volt V
applied and V
GS
V
≤ 500V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2006
12
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