JANSR2N7383 [ETC]
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package ; -200V 100kRad高可靠性的单P沟道TID硬化MOSFET采用TO - 257AA封装\n
| 型号： | JANSR2N7383 |
| 厂家： | 
ETC |
| 描述： | -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
|
| 文件： | 总8页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91401
IRHY9230CM
JANSR2N7383
200V, P-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
REF: MIL-PRF-19500/615
RAD-Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHY9230CM 100K Rads (Si)
IRHY93230CM 300K Rads (Si)
0.8Ω
0.8Ω
-6.5A JANSR2N7383
-6.5A JANSF2N7383
TO-257AA
International Rectifier’s RAD-HardTM HEXFET®
MOSFET technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
-6.5
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
-4.1
-26
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
±20
GS
E
165
mJ
A
AS
I
-6.5
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
-27
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
For footnotes refer to the last page
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1
12/05/00
IRHY9230CM, JANSR2N7383
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-200
—
—
—
—
V
V
= 0V, I = -1.0mA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.27
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.8
Ω
V = -12V, I = -4.1A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
2.0
—
—
—
—
—
-4.0
—
V
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
> -15V, I
= -4.1A ➀
DS
I
-25
-250
V
= -160V ,V =0V
GS
DSS
DS
µA
—
V
= -160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
45
V
V
= -20V
= 20V
GSS
GSS
GS
nA
nC
GS
Q
Q
Q
V
=-12V, I = -6.5A
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
10
25
V
DS
= -100V
t
t
t
t
30
V
DD
= -100V, I = -6.5A
D
50
75
R
= 7.5Ω
G
ns
d(off)
f
65
L
+ L
Total Inductance
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
Input Capacitance
—
—
—
1360
190
40
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
C
Output Capacitance
pF
oss
C
Reverse Transfer Capacitance
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-6.5
-26
-5.0
400
3.4
S
SM
A
V
V
T = 25°C, I = -6.5A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
ns
µC
T = 25°C, I = -6.5A, di/dt ≥ 100A/µs
j
rr
RR
F
V
≤ -25V ➀
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
1.67
80
thJC
thJA
°C/W
Junction-to-Ambient
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHY9230CM, JANSR2N7383
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➀➀
1
Parameter
100KRads(Si)
300K Rads (Si)2
Units
Test Conditions
Min
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Max
Min
-200
Max
BV
-200
-2.0
—
—
—
V
= 0V, I = -1.0mA
GS D
DSS
V
V
➀
-4.0
-100
100
-2.0
—
-5.0
-100
100
-25
V
= V , I = -1.0mA
GS
DS D
GS(th)
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
= -20V
= 20 V
GSS
GS
nA
I
—
—
V
GS
GSS
I
—
- 25
—
µA
V = -160V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-257AA)
Diode Forward Voltage
➀
—
0.804
—
0.804
Ω
V
= -12V, I =-4.1A
D
GS
DS(on)
R
DS(on)
➀
—
—
0.8
—
—
0.8
Ω
V
= -12V, I = -4.1A
D
GS
GS
V
SD
➀
-5.0
-5.0
V
V
= 0V, I = -6.5A
S
1. Part number IRHY9230CM
2. Part number IRHY93230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
43.0
39.0
-200
-200
-200
-200
-200
-125
-200
-75
—
—
36.8
305
-250
-200
-150
-100
-50
Cu
Br
0
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY9230CM, JANSR2N7383
Pre-Irradiation
100
100
10
1
VGS
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
BOTTOM -5.0V
BOTTOM -5.0V
10
-5.0V
-5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
°
T = 150 C
J
1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
-6.5A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
20µs PULSE WIDTH
V
=-12V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
5.0
6.0
7.0
8.0 9.0 10.0
°
T , Junction Temperature( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHY9230CM, JANSR2N7383
20
16
12
8
2500
I
D
= -6.5A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
iss
C
C
= C + C
gs
gd ,
V
V
V
=-160V
=-100V
=-40V
= C
DS
DS
DS
rss
oss
gd
C
= C + C
2000
ds
gd
1500
1000
500
C
iss
C
4
oss
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
0
10
100
0
10
Q
20
30
40
50
60
-V , Drain-to-Source Voltage (V)
DS
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
°
T = 150 C
J
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.0
0.1
1.0
2.0
3.0
4.0
5.0
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHY9230CM, JANSR2N7383
Pre-Irradiation
RD
8.0
6.0
4.0
2.0
0.0
VDS
VGS
D.U.T.
RG
-
+
VDD
-12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
t
SINGLE PULSE
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHY9230CM, JANSR2N7383
400
300
200
100
0
L
I
V
D
DS
TOP
-2.9A
-4.1A
BOTTOM -6.5A
D.U.T
R
.
G
V
DD
A
I
AS
DRIVER
V
-12V
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-
-12 V
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHY9230CM, JANSR2N7383
Footnotes:
Pre-Irradiation
➀➀➀Total Dose Irradiation with V
Bias.
= 0 during
➀➀ Repetitive Rating; Pulse width limited by
GS
-12 volt V
applied and V
DS
maximum junction temperature.
GS
irradiation per MIL-STD-750, method 1019, condition A
➀➀➀V
=-50V, starting T = 25°C, L= 11mH,
J
DD
Peak I =- 6.5A, V
= -12V
➀➀Total Dose Irradiation with V
Bias.
L
GS
DS
-160 volt V
applied and V
= 0 during
➀➀ I
SD
≤ - 6.5A, di/dt ≤ 375A/µs,
≤ - 200V, T ≤ 150°C
J
DS
GS
irradiation per MlL-STD-750, method 1019, condition A
V
DD
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions —TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
8
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