IRG4BC20SPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRG4BC20SPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总8页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95639
IRG4BC20SPbF
StandardSpeedIGBT
INSULATEDGATEBIPOLARTRANSISTOR
Features
C
Standard: optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
V
CES = 600V
VCE(on) typ. = 1.4V
G
Industry standard TO-220AB package
Lead-Free
@VGE = 15V, IC = 10A
E
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
19
IC @ TC = 100°C
10
A
ICM
38
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
38
VGE
± 20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
5.0
mJ
PD @ TC = 25°C
60
24
W
°C
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case )
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
2.1
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.50
80
2.0 (0.07)
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1
7/23/04
IRG4BC20SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
V GE V= 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
600
1
V
8
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
3.0
0.75
V/°C VGE = 0V, IC = 1.0mA
IC = 10A
1.40 1.6
V
GE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
1.85
1.44
IC = 19A
V
See Fig.2, 5
IC = 10A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
2.0 5.8
S
VCE = 100V, IC = 10A
GE = 0V, VCE = 600V
250
2.0
1000
±100
V
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
27 40
4.3 6.5
Conditions
IC = 10A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
See Fig. 8
10
27
15
9.7
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
540 810
430 640
IC = 10A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.12
2.05
mJ See Fig. 9, 10, 14
2.17 3.2
25
13
TJ = 150°C,
IC = 10A, VCC = 480V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
760
780
3.46
7.5
550
39
VGE = 15V, RG = 50Ω
Energy losses include "tail"
mJ See Fig. 11, 14
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
nH
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
pF
VCC = 30V
See Fig. 7
Reverse
Transfer
Capacitance
7.1
= .0M1Hz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC20SPbF
30
25
20
15
10
5
For both:
Duty cycle: 50%
Triangular wave:
T
T
= 125°C
J
= 90°C
sink
Gate drive as specified
Clamp voltage:
80% of rated
Power Dissipation = 13W
Square wave:
60% of rated
voltage
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
10
1
T = 25oC
J
T = 150oC
J
T = 150oC
J
10
T = 25oC
J
V
= 50V
V
= 15V
CC
GE
20µs PULSE WIDTH
5µs PULSE WIDTH
1
5
6
7
8
9
10 11
12
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
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Fig. 3 - Typical Transfer Characteristics
3
IRG4BC20SPbF
20
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
= 20A
C
15
10
5
I
I
= 10A
C
C
=
5.0 A
0
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Case Temperature ( C)
°
T , Junction Temperature ( C)
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
10
0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
t
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig.6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4BC20SPbF
1000
800
600
400
200
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ce
V
CC
I
C
= 400V
= 10A
GE
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
C
ies
C
oes
res
4
C
0
1
10
100
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
Q
, Total Gate Charge (nC)
CE
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
2.20
2.16
2.12
2.08
2.04
2.00
10
V
V
T
= 480V
R
= 50Ω
= 15V
= 480V
CC
GE
J
G
I
I
I
=
=
=
A
A
20
10
C
C
C
= 15V
V
GE
°
= 25
C
V
CC
I
= 10A
C
5.0 A
A
1
0.1
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
R
G
, Gate Resistance
( Ω )
T , Junction Temperature ( C )
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4BC20SPbF
100
10
1
8.0
V
T
= 20V
R
T
= 50Oh
Ω
G
J
GE
J
°
= 125 oC
= 150 C
V
= 480V
= 15V
CC
V
GE
6.0
4.0
2.0
0.0
SAFE OPERATING AREA
10
1
100
1000
0
4
8
12
16
20
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4BC20SPbF
L
D.U.T.
480V
4 X IC@25°C
V *
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(off)
Waveforms
10%
5%
I
C
t
t
f
r
t
d(on)
t=5µs
E
E
off
on
E
= (E +E
)
off
ts
on
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7
IRG4BC20SPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT C ODE 1789
PART NUMBER
AS S EMB LED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTE RNAT IONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
8
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