IRG4BC20UD [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A); 超快软恢复二极管绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.85V ， @ VGE = 15V ， IC = 6.5A ）
| 型号： | IRG4BC20UD |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) |
| 文件： | 总10页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 91449B
IRG4BC20UD
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
VCES = 600V
VCE(on) typ. = 1.85V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G
Generation 3
• IGBT co-packaged with HEXFRED ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
@VGE = 15V, IC = 6.5A
E
n-channel
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
TO-220AB
Parameter
Max.
Units
VCES
C @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
600
V
I
13
IC @ TC = 100°C
6.5
ICM
52
A
ILM
52
IF @ TC = 100°C
7.0
IFM
52
VGE
20
60
V
PD @ TC = 25°C
Maximum Power Dissipation
W
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
------
------
------
-----
Typ.
------
Max.
2.1
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
------
3.5
°C/W
0.50
------
80
-----
------
2 (0.07)
------
g (oz)
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1
3/21/2000
IRG4BC20UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
----
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ----
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.69 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 1.85 2.1
---- 2.27 ----
---- 1.87 ----
3.0 ---- 6.0
IC = 6.5A
VGE = 15V
V
IC = 13A
See Fig. 2, 5
IC = 6.5A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
1.4 4.3 ----
S
VCE = 100V, IC = 6.5A
ICES
Zero Gate Voltage Collector Current
----
----
---- 250
---- 1700
µA
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
---- 1.4 1.7
V
IC = 8.0A
See Fig. 13
----
----
1.3 1.6
---- 100 nA
IC = 8.0A, TJ = 150°C
Gate-to-Emitter Leakage Current
VGE = 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
---- 27 41
---- 4.5 6.8
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
IC = 6.5A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
----
----
----
----
10
39
15
16
----
----
IC = 6.5A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
93 140
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
---- 110 170
---- 0.16 ----
---- 0.13 ----
---- 0.29 0.3
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ See Fig. 9, 10, 11, 18
----
----
38
17
----
----
TJ = 150°C, See Fig. 9, 10, 11, 18
ns
IC = 6.5A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
---- 100 ----
---- 220 ----
---- 0.49 ----
---- 7.5 ----
---- 530 ----
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH
pF
ns
A
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
----
39
----
VCC = 30V
See Fig. 7
IF = 8.0A
---- 7.4 ----
ƒ = 1.0MHz
----
----
37
55
55
90
TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
Irr
Diode Peak Reverse Recovery Current ---- 3.5 5.0
----
----
4.5 8.0
65 138
VR = 200V
Qrr
Diode Reverse Recovery Charge
nC
---- 124 360
---- 240 ----
---- 210 ----
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
2
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IRG4BC20UD
12
10
8
D uty cyc le: 50 %
T
T
=
1 2 5°C
90 °C
J
=
sin k
G ate d rive a s spe cifie d
Tu rn -on los ses includ e
effe cts o f re verse reco very
P ow er Dissip ation
= 13W
60% of rated
voltage
6
4
2
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
TJ = 25°C
TJ = 150°C
TJ = 150°C
10
TJ = 25°C
1
VG E = 15V
V CC = 10V
20µs PULSE WIDTH
5µs PULSE W IDTH
A
0.1
0.1
0.1
1
10
4
6
8
10
12
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
G E
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
A
IRG4BC20UD
2.6
2.2
1.8
1.4
1.0
14
12
10
8
V
= 15V
VGE = 15V
80µs PULSE W IDTH
G E
C
I
= 13A
IC = 6.5A
6
4
I
C
= 3.3A
2
A
0
-60
-40
-20
0
20
40
60
80
100 120 140 160
25
50
75
100
125
150
T
, Case Temperature (°C)
T
, Junction Tem pe rature (°C )
J
C
Fig. 5 - Typical Collector-to-Emitter Voltage
Fig. 4 - Maximum Collector Current vs.
vs. Junction Temperature
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
t
(THERMAL RESPONSE)
2
Notes:
1. D uty factor D
=
t
/ t
1
2
2. P eak T = P
x Z
+ T
C
DM
J
th JC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
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4
IRG4BC20UD
20
16
12
8
1000
800
600
400
200
0
V
C
C
C
= 0V ,
f = 1MHz
VC E = 4 0 0 V
I C = 6 .5A
G E
ies
= C
+ C
+ C
,
C
SHORTE D
ge
gc
ce
= C
= C
res
oes
gc
ce
gc
C
C
ies
o es
C
re s
4
A
A
0
1
10
100
0
5
10
15
20
25
30
V
, Collector-to-Em itter Voltage (V)
Q , Total G ate C ha rg e (n C )
g
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
0.32
0.31
0.30
0.29
VCC = 480V
VGE = 15V
T J = 25°C
I C = 6.5A
R G = 50
Ω
V GE = 15V
V CC = 480V
IC = 13A
IC = 6.5A
1
IC = 3.3A
A
A
0.1
0
10
20
30
40
50
60
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
, Junction Tem perature (°C)
Ω
)
R
, Gate Resistance (
J
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4BC20UD
1.2
1000
100
10
R G = 50
Ω
V
T
= 20V
G E
T J = 150°C
V CC = 480V
V GE = 15V
= 125°C
J
0.9
0.6
0.3
0.0
SAFE OPE RATING A REA
1
A
0.1
1
10
100
1000
0
2
4
6
8
10
12
14
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-Emitter Current (A)
C E
C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
10
1
T
= 150°C
= 125°C
J
T
J
T
=
25°C
J
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Volta ge D ro p - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC20UD
100
10
1
100
80
60
40
20
0
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
F
= 16A
I
= 8.0A
F
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
I
= 4.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
300
I
= 4.0A
= 8.0A
F
I
= 16A
F
1000
I
F
200
100
0
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4BC20UD
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
Ic
Ic
430µF
80%
5% Ic
of Vce
D.U.T.
td(off)
tf
t1+5µ S
Eoff =
Vce ic dt
∫
t1
Fig. 18a - Test Circuit for Measurement of
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
I
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
Vce ie dt
E on =
t4
∫
Erec = Vd id dt
t1
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4BC20UD
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
L
D.U.T.
RL=
1000V
V *
c
0 - 480V
50V
6000µ F
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test
Circuit
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9
IRG4BC20UD
Notes:
Repetitiverating:VGE=20V;pulsewidthlimitedbymaximumjunctiontemperature
(figure20)
VCC=80%(VCES),VGE=20V,L=10µH,RG=50Ω(figure19)
Pulsewidth≤80µs;dutyfactor≤0.1%.
Pulsewidth5.0µs,singleshot.
Case Outline TO-220AB
10.54 (.415)
10.29 (.405)
N O TE S :
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
1
D IM E N S IO N S & T O LE R A N C IN G
4.69 (.185)
4.20 (.165)
P E R A N S I Y 14.5M , 1982.
C O N TR O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E TE R S (IN C H ES ).
C O N FO R M S TO JE D E C O U TLIN E
T O -220AB .
1.32 (.052)
1.22 (.048)
- A -
2
3
6.47 (.255)
6.10 (.240)
4
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LE A D A S S IG N M E N T S
1
2
3
1
2
3
4
- G A TE
- C O LLE C TO R
- EM IT TE R
- C O LLE C TO R
3.96 (.160)
3.55 (.140)
3 X
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3 X
3 X
1.40 (.055)
1.15 (.045)
3 X
0.36 (.014)
M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e ns io ns in M illim e ters a nd (In c he s)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
10
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